Ultraflat indium tin oxide films prepared by ion beam sputtering

Younggun Han, Donghwan Kim, Jun S. Cho, Seok Keun Koh

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; Rrms = 0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (Rrms = 2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (Rrms = 0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions. θ 2004 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)218-223
Number of pages6
JournalThin Solid Films
Volume473
Issue number2
DOIs
Publication statusPublished - 2005 Jan 1

Fingerprint

Tin oxides
indium oxides
Indium
Ion beams
tin oxides
Oxide films
Sputtering
oxide films
sputtering
ion beams
Oxygen
Sheet resistance
oxygen
Film growth
Acoustic impedance
phytotrons
Thick films
Surface morphology
electrical resistance
Surface roughness

Keywords

  • Ambient oxygen
  • Indium tin oxide
  • Ion beam sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Ultraflat indium tin oxide films prepared by ion beam sputtering. / Han, Younggun; Kim, Donghwan; Cho, Jun S.; Koh, Seok Keun.

In: Thin Solid Films, Vol. 473, No. 2, 01.01.2005, p. 218-223.

Research output: Contribution to journalArticle

Han, Younggun ; Kim, Donghwan ; Cho, Jun S. ; Koh, Seok Keun. / Ultraflat indium tin oxide films prepared by ion beam sputtering. In: Thin Solid Films. 2005 ; Vol. 473, No. 2. pp. 218-223.
@article{9d083751a90e4d74a1b177e00f5f7ddb,
title = "Ultraflat indium tin oxide films prepared by ion beam sputtering",
abstract = "Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; Rrms = 0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (Rrms = 2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (Rrms = 0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions. θ 2004 Elsevier B.V. All rights reserved.",
keywords = "Ambient oxygen, Indium tin oxide, Ion beam sputtering",
author = "Younggun Han and Donghwan Kim and Cho, {Jun S.} and Koh, {Seok Keun}",
year = "2005",
month = "1",
day = "1",
doi = "10.1016/j.tsf.2004.05.125",
language = "English",
volume = "473",
pages = "218--223",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Ultraflat indium tin oxide films prepared by ion beam sputtering

AU - Han, Younggun

AU - Kim, Donghwan

AU - Cho, Jun S.

AU - Koh, Seok Keun

PY - 2005/1/1

Y1 - 2005/1/1

N2 - Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; Rrms = 0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (Rrms = 2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (Rrms = 0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions. θ 2004 Elsevier B.V. All rights reserved.

AB - Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; Rrms = 0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (Rrms = 2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (Rrms = 0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions. θ 2004 Elsevier B.V. All rights reserved.

KW - Ambient oxygen

KW - Indium tin oxide

KW - Ion beam sputtering

UR - http://www.scopus.com/inward/record.url?scp=10644292482&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10644292482&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2004.05.125

DO - 10.1016/j.tsf.2004.05.125

M3 - Article

AN - SCOPUS:10644292482

VL - 473

SP - 218

EP - 223

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2

ER -