Ultraflat indium tin oxide films prepared by ion beam sputtering

Younggun Han, Donghwan Kim, Jun S. Cho, Seok Keun Koh

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; Rrms = 0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (Rrms = 2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (Rrms = 0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions. θ 2004 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)218-223
Number of pages6
JournalThin Solid Films
Volume473
Issue number2
DOIs
Publication statusPublished - 2005 Jan 1

Keywords

  • Ambient oxygen
  • Indium tin oxide
  • Ion beam sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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