Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN

Ja Soon Jang, Seong J. Park, Tae Yeon Seong

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We report on ultrahigh-transparency and low-resistance Ni/Au ohmic contacts to surface-treated p-GaN:Mg (3.6×1017 cm-3). It is shown that annealing at 500°C for 1 min in a N2 ambient improves ohmic contact properties. Specific contact resistance is measured to be 5.0(±1.0) ×10-3 and 2.5(±1.0)×10-3 Ω cm2 for the as-deposited and annealed samples, respectively. It is also shown that the light transmittance is 90.3(±0.6) and 97.3(±0.8) % (at 470 nm) for the as-deposited and annealed contacts, respectively. Furthermore, the surface of the annealed contact is found to be fairly smooth with a root-mean-square roughness of 0.84 nm. These results are compared with those previously reported for the Ni/Au contacts.

Original languageEnglish
Pages (from-to)5490-5492
Number of pages3
JournalJournal of Applied Physics
Volume88
Issue number9
Publication statusPublished - 2000 Nov 1
Externally publishedYes

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electric contacts
low resistance
contact resistance
transmittance
roughness
annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Ultrahigh transparency of Ni/Au ohmic contacts to surface-treated p-type GaN. / Jang, Ja Soon; Park, Seong J.; Seong, Tae Yeon.

In: Journal of Applied Physics, Vol. 88, No. 9, 01.11.2000, p. 5490-5492.

Research output: Contribution to journalArticle

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