Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics

Hye Hyeon Byeon, Kein Kim, Woong Kim, Hyunjung Yi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on/I off value of >102, an on-current density per channel width of 2.16 × 10-4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.

Original languageEnglish
Article number5981
JournalScientific Reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

transistors
carbon nanotubes
gels
electric potential
field effect transistors
ions
low voltage
hole mobility
compatibility
templates
lithography
capacitance
electrical properties
mechanical properties
current density
optical properties
vacuum
fabrication
carbon
room temperature

ASJC Scopus subject areas

  • General

Cite this

Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics. / Byeon, Hye Hyeon; Kim, Kein; Kim, Woong; Yi, Hyunjung.

In: Scientific Reports, Vol. 7, No. 1, 5981, 01.12.2017.

Research output: Contribution to journalArticle

@article{c87ee657a7e143f6a328e0b25c9400e6,
title = "Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics",
abstract = "The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on/I off value of >102, an on-current density per channel width of 2.16 × 10-4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.",
author = "Byeon, {Hye Hyeon} and Kein Kim and Woong Kim and Hyunjung Yi",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-06000-w",
language = "English",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Ultralow voltage operation of biologically assembled all carbon nanotube nanomesh transistors with ion-gel gate dielectrics

AU - Byeon, Hye Hyeon

AU - Kim, Kein

AU - Kim, Woong

AU - Yi, Hyunjung

PY - 2017/12/1

Y1 - 2017/12/1

N2 - The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on/I off value of >102, an on-current density per channel width of 2.16 × 10-4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.

AB - The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I on/I off value of >102, an on-current density per channel width of 2.16 × 10-4 A/mm at VDS = 0.4 V, and a field-effect hole mobility of 1.12 cm2/V · s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.

UR - http://www.scopus.com/inward/record.url?scp=85025136988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85025136988&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-06000-w

DO - 10.1038/s41598-017-06000-w

M3 - Article

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 5981

ER -