Abstract
Ultrathin composite films consisting of mixtures of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) with a conjugated block copolymer are developed from a solution-based process. The electronic properties of the films are precisely controlled from metallic to semiconducting to insulating. The tunability of the electronic composite sheets is mainly attributed to (1) the efficient dispersion of SWNTs with a conjugated block copolymer in solution, (2) the control of the number of nanotubes by centrifugation, and (3) the individually networked deposition of SWNTs embedded in the conjugated block copolymer on the target substrate by spin-coating. A highly reliable field-effect transistor with a networked composite film is realized with a specific range of tube density and a high on/off current ratio of approximately 106 which resulted from the Schottky barriers evolved between the individual m- and s-SWNTs in the network. There is also great freedom when choosing both the gate dielectrics and source-drain electrodes for transistors containing the composite films. Furthermore, the fabricated electronic composites are highly transparent, flexible, and chemically robust and thus, they can be conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques. Novel ultrathin electronic composite sheets of individually networked SWNTs dispersed and embedded in a conjugated diblock polymer are developed. The electronic properties of the films are precisely controlled. A highly reliable field-effect transistor with a composite film is realized. The fabricated electronic composites are conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques.
| Original language | English |
|---|---|
| Pages (from-to) | 4305-4313 |
| Number of pages | 9 |
| Journal | Advanced Functional Materials |
| Volume | 20 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2010 Dec 21 |
| Externally published | Yes |
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Keywords
- conjugated block copolymer
- field-effect transistors
- nanocomposites
- Schottky barrier transistors
- SWNTs
ASJC Scopus subject areas
- Biomaterials
- Electrochemistry
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Ultrathin electronic composite sheets of metallic/semiconducting carbon nanotubes embedded in conjugated block copolymers. / Sung, Jinwoo; Huh, June; Choi, Ji Hyuk; Kang, Seok Ju; Choi, Yeon Sik; Lee, Geun Tak; Cho, Junhan; Myoung, Jae Min; Park, Cheolmin.
In: Advanced Functional Materials, Vol. 20, No. 24, 21.12.2010, p. 4305-4313.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultrathin electronic composite sheets of metallic/semiconducting carbon nanotubes embedded in conjugated block copolymers
AU - Sung, Jinwoo
AU - Huh, June
AU - Choi, Ji Hyuk
AU - Kang, Seok Ju
AU - Choi, Yeon Sik
AU - Lee, Geun Tak
AU - Cho, Junhan
AU - Myoung, Jae Min
AU - Park, Cheolmin
PY - 2010/12/21
Y1 - 2010/12/21
N2 - Ultrathin composite films consisting of mixtures of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) with a conjugated block copolymer are developed from a solution-based process. The electronic properties of the films are precisely controlled from metallic to semiconducting to insulating. The tunability of the electronic composite sheets is mainly attributed to (1) the efficient dispersion of SWNTs with a conjugated block copolymer in solution, (2) the control of the number of nanotubes by centrifugation, and (3) the individually networked deposition of SWNTs embedded in the conjugated block copolymer on the target substrate by spin-coating. A highly reliable field-effect transistor with a networked composite film is realized with a specific range of tube density and a high on/off current ratio of approximately 106 which resulted from the Schottky barriers evolved between the individual m- and s-SWNTs in the network. There is also great freedom when choosing both the gate dielectrics and source-drain electrodes for transistors containing the composite films. Furthermore, the fabricated electronic composites are highly transparent, flexible, and chemically robust and thus, they can be conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques. Novel ultrathin electronic composite sheets of individually networked SWNTs dispersed and embedded in a conjugated diblock polymer are developed. The electronic properties of the films are precisely controlled. A highly reliable field-effect transistor with a composite film is realized. The fabricated electronic composites are conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques.
AB - Ultrathin composite films consisting of mixtures of metallic (m-) and semiconducting (s-) single-walled carbon nanotubes (SWNTs) with a conjugated block copolymer are developed from a solution-based process. The electronic properties of the films are precisely controlled from metallic to semiconducting to insulating. The tunability of the electronic composite sheets is mainly attributed to (1) the efficient dispersion of SWNTs with a conjugated block copolymer in solution, (2) the control of the number of nanotubes by centrifugation, and (3) the individually networked deposition of SWNTs embedded in the conjugated block copolymer on the target substrate by spin-coating. A highly reliable field-effect transistor with a networked composite film is realized with a specific range of tube density and a high on/off current ratio of approximately 106 which resulted from the Schottky barriers evolved between the individual m- and s-SWNTs in the network. There is also great freedom when choosing both the gate dielectrics and source-drain electrodes for transistors containing the composite films. Furthermore, the fabricated electronic composites are highly transparent, flexible, and chemically robust and thus, they can be conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques. Novel ultrathin electronic composite sheets of individually networked SWNTs dispersed and embedded in a conjugated diblock polymer are developed. The electronic properties of the films are precisely controlled. A highly reliable field-effect transistor with a composite film is realized. The fabricated electronic composites are conveniently micropatterned by photolithography, as well as by unconventional transfer printing techniques.
KW - conjugated block copolymer
KW - field-effect transistors
KW - nanocomposites
KW - Schottky barrier transistors
KW - SWNTs
UR - http://www.scopus.com/inward/record.url?scp=78650379562&partnerID=8YFLogxK
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U2 - 10.1002/adfm.201001064
DO - 10.1002/adfm.201001064
M3 - Article
VL - 20
SP - 4305
EP - 4313
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 24
ER -