An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 24% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (Dit) of 1.2 × 1012 eV-1cm-2, a record-low gate leakage current of 1.14 × 10-7 A/cm2 at -1V, and peak mobility of 68 cm2/ V·s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs.
- gate leakage current
- interface properties
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering