Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using y Doped ZrO2 with record-low leakage current

Tae In Lee, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


An advanced gate stack of Y-doped ZrO2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO2 to enhance interfacial properties. The gate stack of ZrO2 with 24% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (Dit) of 1.2 × 1012 eV-1cm-2, a record-low gate leakage current of 1.14 × 10-7 A/cm2 at -1V, and peak mobility of 68 cm2/ V·s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs.

Original languageEnglish
Article number8641385
Pages (from-to)502-505
Number of pages4
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2019 Apr


  • EOT
  • Germanium
  • gate leakage current
  • interface properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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