Ultrathin EOT (0.67 nm) High-k Dielectric on Ge MOSFET Using y Doped ZrO 2 with record-low leakage current

Tae In Lee, Hyun Jun Ahn, Min Ju Kim, Eui Joong Shin, Seung Hwan Lee, Sung Won Shin, Wan Sik Hwang, Hyun-Yong Yu, Byung Jin Cho

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


An advanced gate stack of Y-doped ZrO 2 high-k dielectric is demonstrated for Ge MOSFETs. ZrO 2 is implemented due to its high-permittivity (high-k) value, and additional Y is doped into the ZrO 2 to enhance interfacial properties. The gate stack of ZrO 2 with 24% Y doping shows improved electrical properties, achieving an EOT of 0.67 nm, a low interface trap density (D it ) of 1.2 × 10 12 eV -1 cm -2 , a record-low gate leakage current of 1.14 × 10 -7 A/cm 2 at -1V, and peak mobility of 68 cm 2 / V·s. The proposed gate stack would enhance transistor speed and save power consumption of Ge MOSFETs.

Original languageEnglish
Article number8641385
Pages (from-to)502-505
Number of pages4
JournalIEEE Electron Device Letters
Issue number4
Publication statusPublished - 2019 Apr 1


  • EOT
  • gate leakage current
  • Germanium
  • interface properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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