Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes

Kwangeun Kim, Jeongmin Kang, Myeongwon Lee, Changjoon Yoon, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The optical characteristics of an n-type ZnO/p-type Si crossed nanowire (NW) light-emitting diode (LED) were investigated in this study. N-ZnO nanowires (NWs) were synthesized by thermal chemical vapor deposition, and p-Si NWs were fabricated by etching a single crystalline Si wafer. The p-n heterojunction LED formed by the cross of the n-ZnO and p-Si NWs selected from the NWs prepared in this work exhibited the current rectifying behavior with the turn-on voltage of 1.3 V. Our investigation of the photoluminescence spectrum of the as-grown n-ZnO NWs and electroluminescence spectrum of the n-ZnO/p-Si crossed NW LED reveals that both spectra have the same position of peaks at 390 nm. This result indicates that the UV emission from the crossed NW LED is mostly attributed to the band-to-band transition of electrons in the ZnO NW.

Original languageEnglish
JournalJapanese Journal of Applied Physics
Volume49
Issue number6 PART 2
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

Electroluminescence
electroluminescence
Nanowires
Light emitting diodes
nanowires
light emitting diodes
Electron transitions
Heterojunctions
heterojunctions
Chemical vapor deposition
Etching
Photoluminescence
etching
vapor deposition
wafers
Crystalline materials
photoluminescence
Electrons
Electric potential
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes. / Kim, Kwangeun; Kang, Jeongmin; Lee, Myeongwon; Yoon, Changjoon; Cho, Kyoungah; Kim, Sangsig.

In: Japanese Journal of Applied Physics, Vol. 49, No. 6 PART 2, 01.06.2010.

Research output: Contribution to journalArticle

Kim, Kwangeun ; Kang, Jeongmin ; Lee, Myeongwon ; Yoon, Changjoon ; Cho, Kyoungah ; Kim, Sangsig. / Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes. In: Japanese Journal of Applied Physics. 2010 ; Vol. 49, No. 6 PART 2.
@article{bc38e599d959460980c0cbfe76c32701,
title = "Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes",
abstract = "The optical characteristics of an n-type ZnO/p-type Si crossed nanowire (NW) light-emitting diode (LED) were investigated in this study. N-ZnO nanowires (NWs) were synthesized by thermal chemical vapor deposition, and p-Si NWs were fabricated by etching a single crystalline Si wafer. The p-n heterojunction LED formed by the cross of the n-ZnO and p-Si NWs selected from the NWs prepared in this work exhibited the current rectifying behavior with the turn-on voltage of 1.3 V. Our investigation of the photoluminescence spectrum of the as-grown n-ZnO NWs and electroluminescence spectrum of the n-ZnO/p-Si crossed NW LED reveals that both spectra have the same position of peaks at 390 nm. This result indicates that the UV emission from the crossed NW LED is mostly attributed to the band-to-band transition of electrons in the ZnO NW.",
author = "Kwangeun Kim and Jeongmin Kang and Myeongwon Lee and Changjoon Yoon and Kyoungah Cho and Sangsig Kim",
year = "2010",
month = "6",
day = "1",
doi = "10.1143/JJAP.49.06GG05",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 PART 2",

}

TY - JOUR

T1 - Ultraviolet electroluminescence emission from n-type ZnO/p-type Si crossed nanowire light-emitting diodes

AU - Kim, Kwangeun

AU - Kang, Jeongmin

AU - Lee, Myeongwon

AU - Yoon, Changjoon

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2010/6/1

Y1 - 2010/6/1

N2 - The optical characteristics of an n-type ZnO/p-type Si crossed nanowire (NW) light-emitting diode (LED) were investigated in this study. N-ZnO nanowires (NWs) were synthesized by thermal chemical vapor deposition, and p-Si NWs were fabricated by etching a single crystalline Si wafer. The p-n heterojunction LED formed by the cross of the n-ZnO and p-Si NWs selected from the NWs prepared in this work exhibited the current rectifying behavior with the turn-on voltage of 1.3 V. Our investigation of the photoluminescence spectrum of the as-grown n-ZnO NWs and electroluminescence spectrum of the n-ZnO/p-Si crossed NW LED reveals that both spectra have the same position of peaks at 390 nm. This result indicates that the UV emission from the crossed NW LED is mostly attributed to the band-to-band transition of electrons in the ZnO NW.

AB - The optical characteristics of an n-type ZnO/p-type Si crossed nanowire (NW) light-emitting diode (LED) were investigated in this study. N-ZnO nanowires (NWs) were synthesized by thermal chemical vapor deposition, and p-Si NWs were fabricated by etching a single crystalline Si wafer. The p-n heterojunction LED formed by the cross of the n-ZnO and p-Si NWs selected from the NWs prepared in this work exhibited the current rectifying behavior with the turn-on voltage of 1.3 V. Our investigation of the photoluminescence spectrum of the as-grown n-ZnO NWs and electroluminescence spectrum of the n-ZnO/p-Si crossed NW LED reveals that both spectra have the same position of peaks at 390 nm. This result indicates that the UV emission from the crossed NW LED is mostly attributed to the band-to-band transition of electrons in the ZnO NW.

UR - http://www.scopus.com/inward/record.url?scp=77955318854&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955318854&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.06GG05

DO - 10.1143/JJAP.49.06GG05

M3 - Article

AN - SCOPUS:77955318854

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 PART 2

ER -