Ultraviolet photodetectors based on ZnO nanoparticles

Jin Hyung Jun; Hojun Seong; Kyoungah Cho; Byung Moo Moon; Sangsig Kim

doi:10.1016/j.ceramint.2009.03.032

Ultraviolet photodetectors based on ZnO nanoparticles

Jin Hyung Jun, Hojun Seong, Kyoungah Cho, Byung Moo Moon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

147 Citations (Scopus)

Abstract

Ultraviolet (UV) photodetectors based on ZnO nanoparticles (NPs) were fabricated and their optoelectronic properties were examined. The dominant photoluminescence (PL) peak of the ZnO NPs was located at a wavelength of 380 nm under the illumination of 325-nm wavelength light. The direct bandgap transition of the charge carriers at λ = 380 nm contributed to the photocurrent. The ratio of the photocurrent to the dark current (on/off ratio) was as high as 10⁶, which is favorable for photodetectors. The decay time constant in the photoresponse was relatively small, while the rise time constant was relatively large. The reasons for the high on/off ratio and photoresponse characteristics are discussed in this paper.

Original language	English
Pages (from-to)	2797-2801
Number of pages	5
Journal	Ceramics International
Volume	35
Issue number	7
DOIs	https://doi.org/10.1016/j.ceramint.2009.03.032
Publication status	Published - 2009 Sept

Keywords

C. Optoelectrical properties
D. ZnO
Nanoparticles
Photodetectors

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2009.03.032

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title = "Ultraviolet photodetectors based on ZnO nanoparticles",

abstract = "Ultraviolet (UV) photodetectors based on ZnO nanoparticles (NPs) were fabricated and their optoelectronic properties were examined. The dominant photoluminescence (PL) peak of the ZnO NPs was located at a wavelength of 380 nm under the illumination of 325-nm wavelength light. The direct bandgap transition of the charge carriers at λ = 380 nm contributed to the photocurrent. The ratio of the photocurrent to the dark current (on/off ratio) was as high as 106, which is favorable for photodetectors. The decay time constant in the photoresponse was relatively small, while the rise time constant was relatively large. The reasons for the high on/off ratio and photoresponse characteristics are discussed in this paper.",

keywords = "C. Optoelectrical properties, D. ZnO, Nanoparticles, Photodetectors",

author = "Jun, {Jin Hyung} and Hojun Seong and Kyoungah Cho and Moon, {Byung Moo} and Sangsig Kim",

note = "Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), and the Nano R&D Program (M10703000980-07M0300-98010).",

year = "2009",

month = sep,

doi = "10.1016/j.ceramint.2009.03.032",

language = "English",

volume = "35",

pages = "2797--2801",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - Ultraviolet photodetectors based on ZnO nanoparticles

AU - Jun, Jin Hyung

AU - Seong, Hojun

AU - Cho, Kyoungah

AU - Moon, Byung Moo

AU - Kim, Sangsig

N1 - Funding Information: This work was supported by the National R&D Project for Nano Science and Technology (10022916-2006-22), the Center for Integrated-Nano-Systems (CINS) of the Korea Research Foundation (KRF-2006-005-J03601), the “SystemIC2010” project of the Korea Ministry of Commerce, Industry and Energy, the Korea Science and Engineering Foundation (KOSEF) through the National Research Lab. Program (R0A-2005-000-10045-02 (2007)), and the Nano R&D Program (M10703000980-07M0300-98010).

PY - 2009/9

Y1 - 2009/9

N2 - Ultraviolet (UV) photodetectors based on ZnO nanoparticles (NPs) were fabricated and their optoelectronic properties were examined. The dominant photoluminescence (PL) peak of the ZnO NPs was located at a wavelength of 380 nm under the illumination of 325-nm wavelength light. The direct bandgap transition of the charge carriers at λ = 380 nm contributed to the photocurrent. The ratio of the photocurrent to the dark current (on/off ratio) was as high as 106, which is favorable for photodetectors. The decay time constant in the photoresponse was relatively small, while the rise time constant was relatively large. The reasons for the high on/off ratio and photoresponse characteristics are discussed in this paper.

AB - Ultraviolet (UV) photodetectors based on ZnO nanoparticles (NPs) were fabricated and their optoelectronic properties were examined. The dominant photoluminescence (PL) peak of the ZnO NPs was located at a wavelength of 380 nm under the illumination of 325-nm wavelength light. The direct bandgap transition of the charge carriers at λ = 380 nm contributed to the photocurrent. The ratio of the photocurrent to the dark current (on/off ratio) was as high as 106, which is favorable for photodetectors. The decay time constant in the photoresponse was relatively small, while the rise time constant was relatively large. The reasons for the high on/off ratio and photoresponse characteristics are discussed in this paper.

KW - C. Optoelectrical properties

KW - D. ZnO

KW - Nanoparticles

KW - Photodetectors

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DO - 10.1016/j.ceramint.2009.03.032

M3 - Article

AN - SCOPUS:67649669567

SN - 0272-8842

VL - 35

SP - 2797

EP - 2801

JO - Ceramics International

JF - Ceramics International

IS - 7

ER -

Ultraviolet photodetectors based on ZnO nanoparticles

Abstract

Keywords

ASJC Scopus subject areas

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