TY - JOUR
T1 - Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode
AU - Kim, Hyun
AU - Tarelkin, Sergey
AU - Polyakov, Alexander
AU - Troschiev, Sergey
AU - Nosukhin, Sergey
AU - Kuznetsov, Mikhail
AU - Kim, Jihyun
N1 - Funding Information:
This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, ), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: . National Research Foundation of Korea https://doi.org/10.13039/501100003725 2017M1A2A2087351 Korea Institute of Energy Technology Evaluation and Planning https://doi.org/10.13039/501100007053 20172010104830 Ministry of Education and Science of the Russian Federation https://doi.org/10.13039/501100003443 K2-2017-068 Russian Science Foundation https://doi.org/10.13039/501100006769 18-72-00232 yes . � 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited http://creativecommons.org/licenses/by-nc-nd/4.0/
Publisher Copyright:
© 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
PY - 2020/1/5
Y1 - 2020/1/5
N2 - The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W-1), rejection ratio (8.5 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.
AB - The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β-Ga2O3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch. Rectifying current-voltage characteristics with a rectification ratio exceeding 107 were obtained with a high reverse hard breakdown voltage of 135 V. This UWBG p-n heterojunction diode exhibited good thermal stability at elevated temperatures, retaining its high rectification ratio and low reverse leakage current. Excellent photoresponse characteristics, including responsivity (12 A W-1), rejection ratio (8.5 103), photo-to-dark-current ratio (3900), and fast response/decay characteristics, were observed from the diamond/β-Ga2O3 p-n heterojunction photodiode, showing no persistent photoconductivity. The mixed-dimensional p-n heterojunction diode based on two UWBG semiconductors (p-type diamond and n-type β-Ga2O3) can be used as a robust building block in next-generation power electronics and solar-blind optoelectronics.
UR - http://www.scopus.com/inward/record.url?scp=85085251587&partnerID=8YFLogxK
U2 - 10.1149/2162-8777/ab89b8
DO - 10.1149/2162-8777/ab89b8
M3 - Article
AN - SCOPUS:85085251587
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
SN - 2162-8769
IS - 4
M1 - 045004
ER -