Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance

Jongmin Geum; Sinsu Kyoung; Man Young Sung

doi:10.1109/LED.2016.2584659

Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance

Jongmin Geum, Sinsu Kyoung, Man Young Sung

Honorary professors

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.

Original language	English
Article number	7499813
Pages (from-to)	1045-1047
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	37
Issue number	8
DOIs	https://doi.org/10.1109/LED.2016.2584659
Publication status	Published - 2016 Aug

Keywords

JBS diode
RSBD
off-state leakage current
on-resistance
unbalanced layout method

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance",

abstract = "Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.",

keywords = "JBS diode, RSBD, off-state leakage current, on-resistance, unbalanced layout method",

author = "Jongmin Geum and Sinsu Kyoung and Sung, {Man Young}",

note = "Funding Information: This work was supported by the Korea University.",

year = "2016",

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doi = "10.1109/LED.2016.2584659",

language = "English",

volume = "37",

pages = "1045--1047",

journal = "IEEE Electron Device Letters",

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T1 - Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance

AU - Geum, Jongmin

AU - Kyoung, Sinsu

AU - Sung, Man Young

N1 - Funding Information: This work was supported by the Korea University.

PY - 2016/8

Y1 - 2016/8

N2 - Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.

AB - Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.

KW - JBS diode

KW - RSBD

KW - off-state leakage current

KW - on-resistance

KW - unbalanced layout method

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JF - IEEE Electron Device Letters

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ER -

Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance

Abstract

Keywords

ASJC Scopus subject areas

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