Abstract
Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.
| Original language | English |
|---|---|
| Article number | 7499813 |
| Pages (from-to) | 1045-1047 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 37 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2016 Aug 1 |
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Keywords
- JBS diode
- off-state leakage current
- on-resistance
- RSBD
- unbalanced layout method
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance. / Geum, Jongmin; Kyoung, Sinsu; Sung, Man Young.
In: IEEE Electron Device Letters, Vol. 37, No. 8, 7499813, 01.08.2016, p. 1045-1047.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Unbalanced layout method for the 4H-SiC JBS diode offering improved tradeoff between leakage current and ON-resistance
AU - Geum, Jongmin
AU - Kyoung, Sinsu
AU - Sung, Man Young
PY - 2016/8/1
Y1 - 2016/8/1
N2 - Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.
AB - Two critical issues in the electrical characteristics of the 4H-SiC junction barrier Schottky (JBS) diode are the OFF-state leakage current and the ON-resistance, which are in a tradeoff relationship. To overcome the limitations resulting from these electrical characteristics, an unbalanced layout method is proposed in this letter. It can be verified that the difference in the mobility at the sides and at the center of the chip is because of the temperature distribution in JBS discrete devices. Hence, a JBS discrete device chip using the unbalanced layout method is fabricated, which has a higher ratio of Schottky barrier diode, which is ratio of the junction area: Schottky area in one cell, at the sides of the chip than at the center. The OFF-state leakage current of the unbalanced layout design is 100 times smaller than that of the reference model, for the same ON-state current.
KW - JBS diode
KW - off-state leakage current
KW - on-resistance
KW - RSBD
KW - unbalanced layout method
UR - http://www.scopus.com/inward/record.url?scp=84980384645&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84980384645&partnerID=8YFLogxK
U2 - 10.1109/LED.2016.2584659
DO - 10.1109/LED.2016.2584659
M3 - Article
VL - 37
SP - 1045
EP - 1047
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
M1 - 7499813
ER -