Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

Young Woo Ok, Min Gu Kang, Donghwan Kim, Jeong Chul Lee, Kyung Hoon Yoon

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO2 and investigated their electrical properties using the light current-voltage (I-V) curve and Suns-Voc measurements. The light I-V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-Voc measurements showed that the bias-dependence of the light I-V curves did not originate from the recombination in the SiO2/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I-V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high Jsc and fill factor in n-type based Si heterojunction solar cells.

Original languageEnglish
Pages (from-to)1186-1190
Number of pages5
JournalCurrent Applied Physics
Volume9
Issue number6
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • Heterojunction
  • I-V analysis
  • Solar cells
  • a-Si/c-Si

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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