Unidirectional anisotropy in exchange coupled NiFe/FeMn system for thin NiFe films

Young-geun Kim, K. Ha, L. L. Rea

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The unidirectional exchange anisotropy field Hex was investigated in NiFe/FeMn films. It was found that the Hex is proportional to tNiFe -1.2 for 30 angstroms ≤tNiFe≤400 angstroms where tNiFe is the NiFe film thickness. For tNiFe = 30 angstroms, Hex was measured to be 800 Oe in some samples. NiFe/FeMn structures on alumina underlayers were also studied; their presence reduces the strength of the anisotropy significantly.

Original languageEnglish
Pages (from-to)3823-3825
Number of pages3
JournalIEEE Transactions on Magnetics
Volume31
Issue number6 pt 2
DOIs
Publication statusPublished - 1995 Nov 1
Externally publishedYes

Fingerprint

Anisotropy
Thin films
anisotropy
Aluminum Oxide
thin films
Film thickness
film thickness
Alumina
aluminum oxides

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Unidirectional anisotropy in exchange coupled NiFe/FeMn system for thin NiFe films. / Kim, Young-geun; Ha, K.; Rea, L. L.

In: IEEE Transactions on Magnetics, Vol. 31, No. 6 pt 2, 01.11.1995, p. 3823-3825.

Research output: Contribution to journalArticle

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