Uniform Ag thin film growth on an Sb-terminated Si(111) surface

Kang Ho Park, Jeong Sook Ha, El Hang Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We report on the room-temperature-growth of highly uniform and ultrathin Ag films on Sb-terminated Si(111) surfaces, as evidenced from a scanning tunneling microscopy (STM) study in an UHV system. With predeposition of one monolayer (ML) of Sb, uniform growth of Ag islands was observed at room temperature. The Sb layer suppresses the surface diffusion of Ag atoms on Si surface and increases the Ag island density, and then the increased island density is believed to cause coalescence of Ag islands before the beginning of multilayer growth in higher coverages, resulting in the growth of atomically flat and uniform islands on the Sb surfactant layer.

Original languageEnglish
Pages (from-to)71-80
Number of pages10
JournalETRI Journal
Volume19
Issue number2
Publication statusPublished - 1997 Jul 1

Fingerprint

Film growth
Thin films
Surface diffusion
Growth temperature
Scanning tunneling microscopy
Coalescence
Surface-Active Agents
Monolayers
Multilayers
Surface active agents
Atoms
Temperature

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Uniform Ag thin film growth on an Sb-terminated Si(111) surface. / Park, Kang Ho; Ha, Jeong Sook; Lee, El Hang.

In: ETRI Journal, Vol. 19, No. 2, 01.07.1997, p. 71-80.

Research output: Contribution to journalArticle

Park, KH, Ha, JS & Lee, EH 1997, 'Uniform Ag thin film growth on an Sb-terminated Si(111) surface', ETRI Journal, vol. 19, no. 2, pp. 71-80.
Park, Kang Ho ; Ha, Jeong Sook ; Lee, El Hang. / Uniform Ag thin film growth on an Sb-terminated Si(111) surface. In: ETRI Journal. 1997 ; Vol. 19, No. 2. pp. 71-80.
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