Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Hee Dong Kim, Ho Myoung An, Seok Man Hong, Tae Geun Kim

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >105 s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.

Original languageEnglish
Article number125020
JournalSemiconductor Science and Technology
Volume27
Issue number12
DOIs
Publication statusPublished - 2012 Dec 1

Fingerprint

ITO (semiconductors)
Data storage equipment
cells
endurance
Opacity
transmittance
filaments
capacitors
Durability
Capacitors
conduction
Fabrication
cycles
fabrication
electronics
Temperature
temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells. / Kim, Hee Dong; An, Ho Myoung; Hong, Seok Man; Kim, Tae Geun.

In: Semiconductor Science and Technology, Vol. 27, No. 12, 125020, 01.12.2012.

Research output: Contribution to journalArticle

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