Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Hee Dong Kim; Ho Myoung An; Seok Man Hong; Tae Geun Kim

doi:10.1088/0268-1242/27/12/125020

Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Hee Dong Kim, Ho Myoung An, Seok Man Hong, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >10⁵ s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.

Original language	English
Article number	125020
Journal	Semiconductor Science and Technology
Volume	27
Issue number	12
DOIs	https://doi.org/10.1088/0268-1242/27/12/125020
Publication status	Published - 2012 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/27/12/125020

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abstract = "We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >105 s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.",

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N2 - We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >105 s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.

AB - We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >105 s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.

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Unipolar resistive switching phenomena in fully transparent SiN-based memory cells

Abstract

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