We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of >100 cycles and a retention time of >105 s at 85°C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices.
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Condensed Matter Physics