Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate

Tae Geun Seong, Beom Seok Lee, Kyu Bum Choi, Sang Hyo Kweon, Beom Yong Kim, Kyooho Jung, Ji Won Moon, Kee Jeong Lee, Kwon Hong, Sahn Nahm

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10 Citations (Scopus)

Abstract

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number4
DOIs
Publication statusPublished - 2014 Apr 1

Keywords

  • PCMO
  • ReRAM
  • Resistive switching
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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  • Cite this

    Seong, T. G., Lee, B. S., Choi, K. B., Kweon, S. H., Kim, B. Y., Jung, K., Moon, J. W., Lee, K. J., Hong, K., & Nahm, S. (2014). Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate. Current Applied Physics, 14(4), 538-542. https://doi.org/10.1016/j.cap.2014.01.012