Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate

Tae Geun Seong, Beom Seok Lee, Kyu Bum Choi, Sang Hyo Kweon, Beom Yong Kim, Kyooho Jung, Ji Won Moon, Kee Jeong Lee, Kwon Hong, Sahn Nahm

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number4
DOIs
Publication statusPublished - 2014 Apr 1

Fingerprint

low resistance
high resistance
Amorphous films
Substrates
conduction
Ohms law
filaments
Temperature
temperature

Keywords

  • PCMO
  • ReRAM
  • Resistive switching
  • Thin film

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate. / Seong, Tae Geun; Lee, Beom Seok; Choi, Kyu Bum; Kweon, Sang Hyo; Kim, Beom Yong; Jung, Kyooho; Moon, Ji Won; Lee, Kee Jeong; Hong, Kwon; Nahm, Sahn.

In: Current Applied Physics, Vol. 14, No. 4, 01.04.2014, p. 538-542.

Research output: Contribution to journalArticle

Seong, TG, Lee, BS, Choi, KB, Kweon, SH, Kim, BY, Jung, K, Moon, JW, Lee, KJ, Hong, K & Nahm, S 2014, 'Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate', Current Applied Physics, vol. 14, no. 4, pp. 538-542. https://doi.org/10.1016/j.cap.2014.01.012
Seong, Tae Geun ; Lee, Beom Seok ; Choi, Kyu Bum ; Kweon, Sang Hyo ; Kim, Beom Yong ; Jung, Kyooho ; Moon, Ji Won ; Lee, Kee Jeong ; Hong, Kwon ; Nahm, Sahn. / Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate. In: Current Applied Physics. 2014 ; Vol. 14, No. 4. pp. 538-542.
@article{73127dd849ea48a0b07d22df777f947f,
title = "Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate",
abstract = "Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.",
keywords = "PCMO, ReRAM, Resistive switching, Thin film",
author = "Seong, {Tae Geun} and Lee, {Beom Seok} and Choi, {Kyu Bum} and Kweon, {Sang Hyo} and Kim, {Beom Yong} and Kyooho Jung and Moon, {Ji Won} and Lee, {Kee Jeong} and Kwon Hong and Sahn Nahm",
year = "2014",
month = "4",
day = "1",
doi = "10.1016/j.cap.2014.01.012",
language = "English",
volume = "14",
pages = "538--542",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Unipolar resistive switching properties of amorphous Pr 0.7Ca0.3MnO3 films grown on a Pt/Ti/SiO 2/Si substrate

AU - Seong, Tae Geun

AU - Lee, Beom Seok

AU - Choi, Kyu Bum

AU - Kweon, Sang Hyo

AU - Kim, Beom Yong

AU - Jung, Kyooho

AU - Moon, Ji Won

AU - Lee, Kee Jeong

AU - Hong, Kwon

AU - Nahm, Sahn

PY - 2014/4/1

Y1 - 2014/4/1

N2 - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

AB - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films were grown on a Pt/Ti/SiO2/Si (Pt-Si) substrate at temperatures below 500 C and the Pt/APCMO/Pt-Si device showed unipolar resistive switching behavior. Conduction behavior of the low resistance state (LRS) of the Pt/APCMO/Pt-Si device followed Ohm's law, and the resistance in LRS was independent of the size of the device, indicating that the conduction behavior in LRS can be explained by the presence of the conductive filaments. On the other hand, the resistance in the high resistance state (HRS) decreased with increasing the device size, and the conduction mechanism in the HRS was explained by Schottky emission.

KW - PCMO

KW - ReRAM

KW - Resistive switching

KW - Thin film

UR - http://www.scopus.com/inward/record.url?scp=84893941165&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893941165&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2014.01.012

DO - 10.1016/j.cap.2014.01.012

M3 - Article

AN - SCOPUS:84893941165

VL - 14

SP - 538

EP - 542

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4

ER -