Universal metal-interlayer-semiconductor contact modeling considering interface-state effect on contact resistivity degradation

Jeong Kyu Kim, Seung Hwan Kim, Taikyu Kim, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


We present a universal metal-interlayer-semiconductor (MIS) contact model to demonstrate the effect of Fermi-level unpinning, considering both the extrinsic interface-state density (Dit) and the density of metal-induced gap states (DMIGS) at the semiconductor surface. Previous studies on MIS contact modeling have quantified only the impact of DMIGS on Fermi-level pinning. However, the extrinsic interface states such as interface traps and local vacancies significantly affect the contact resistivity degradation in MIS contacts. Moreover, field emission (FE) and thermionic FE (TFE) current density models in MIS contact are described in detail, for the extraction of the specific contact resistivity (ρc). The physical validity of the proposed model is demonstrated by comparing its calculated ρc with those obtained in prior experimental studies employing a GaAs substrate (Ti/ZnO/n-GaAs and Ti/TiO2/n-GaAs). The ρc values for the MIS contacts are also evaluated with variousDit levels and the interlayers. This model is promising for the development of a comprehensive next-generation MIS contact for the sub-10-nm complementary metal-oxide-semiconductor technology.

Original languageEnglish
Article number8466861
Pages (from-to)4982-4987
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number11
Publication statusPublished - 2018 Nov


  • Complementary metal-oxide-semiconductor (CMOS)
  • Fermi-level unpinning
  • contact resistance
  • interface state
  • metal-induced gap state (MIGS)
  • specific contact resistivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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