Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications

Gyu Ri Hong, Sun Sook Lee, Hye Jin Park, Yejin Jo, Ju Young Kim, Hoi Sung Lee, Yun Chan Kang, Beyong Hwan Ryu, Aeran Song, Kwun Bum Chung, Youngmin Choi, Sunho Jeong

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.

Original languageEnglish
Pages (from-to)14058-14066
Number of pages9
JournalACS Applied Materials and Interfaces
Volume9
Issue number16
DOIs
Publication statusPublished - 2017 Apr 26

Keywords

  • Ag
  • migration
  • print
  • solution-process
  • transistor

ASJC Scopus subject areas

  • Materials Science(all)

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