Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

Mai Ha Hoang, Youngmee Kim, Minsik Kim, Kyung Hwan Kim, Tae Wan Lee, Duc Nghia Nguyen, Sung Jin Kim, Kwangyeol Lee, Suk Joong Lee, Dong Hoon Choi

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).

Original languageEnglish
Pages (from-to)5363-5367
Number of pages5
JournalAdvanced Materials
Volume24
Issue number39
DOIs
Publication statusPublished - 2012 Oct 9

Fingerprint

Organic field effect transistors
Porphyrins
Field effect transistors
Charge transfer
Agglomeration
Crystal structure
Single crystals
Derivatives

Keywords

  • field effect transistors
  • molecular aggregation
  • organic semiconductors
  • phototransistor
  • porphyrin
  • single crystals

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins. / Hoang, Mai Ha; Kim, Youngmee; Kim, Minsik; Kim, Kyung Hwan; Lee, Tae Wan; Nguyen, Duc Nghia; Kim, Sung Jin; Lee, Kwangyeol; Lee, Suk Joong; Choi, Dong Hoon.

In: Advanced Materials, Vol. 24, No. 39, 09.10.2012, p. 5363-5367.

Research output: Contribution to journalArticle

Hoang, Mai Ha ; Kim, Youngmee ; Kim, Minsik ; Kim, Kyung Hwan ; Lee, Tae Wan ; Nguyen, Duc Nghia ; Kim, Sung Jin ; Lee, Kwangyeol ; Lee, Suk Joong ; Choi, Dong Hoon. / Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins. In: Advanced Materials. 2012 ; Vol. 24, No. 39. pp. 5363-5367.
@article{6bcd4097cbb24dd0b0249813986ae041,
title = "Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins",
abstract = "Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).",
keywords = "field effect transistors, molecular aggregation, organic semiconductors, phototransistor, porphyrin, single crystals",
author = "Hoang, {Mai Ha} and Youngmee Kim and Minsik Kim and Kim, {Kyung Hwan} and Lee, {Tae Wan} and Nguyen, {Duc Nghia} and Kim, {Sung Jin} and Kwangyeol Lee and Lee, {Suk Joong} and Choi, {Dong Hoon}",
year = "2012",
month = "10",
day = "9",
doi = "10.1002/adma.201202148",
language = "English",
volume = "24",
pages = "5363--5367",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "39",

}

TY - JOUR

T1 - Unusually high-performing organic field-effect transistors based on π-extended semiconducting porphyrins

AU - Hoang, Mai Ha

AU - Kim, Youngmee

AU - Kim, Minsik

AU - Kim, Kyung Hwan

AU - Lee, Tae Wan

AU - Nguyen, Duc Nghia

AU - Kim, Sung Jin

AU - Lee, Kwangyeol

AU - Lee, Suk Joong

AU - Choi, Dong Hoon

PY - 2012/10/9

Y1 - 2012/10/9

N2 - Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).

AB - Highly conjugated porphyrin derivatives, H2TP and ZnTP, are synthesized. J-aggregations of the H-aggregated dimeric porphyrin pairs are clearly observed by their single crystal structures that facilitate slip-stacked charge transport phenomenon. In particular, their SC-FETs show the highest field-effect mobilities of 0.85-2.90 cm2 V-1s -1. Furthermore, the ZnTP-based OPT displays a dramatic photoinduced current enhancement with a high photoresponsivity of 22 000 A W-1 under a very low light intensity (5.6 m W cm-2).

KW - field effect transistors

KW - molecular aggregation

KW - organic semiconductors

KW - phototransistor

KW - porphyrin

KW - single crystals

UR - http://www.scopus.com/inward/record.url?scp=84866998957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866998957&partnerID=8YFLogxK

U2 - 10.1002/adma.201202148

DO - 10.1002/adma.201202148

M3 - Article

VL - 24

SP - 5363

EP - 5367

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 39

ER -