Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes

Jae Seong Park, Young Hoon Sung, Jin Young Na, Daesung Kang, Sun Kyung Kim, Heon Lee, Tae Yeon Seong

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4 Citations (Scopus)


We employed a patterned current blocking layer (CBL) to enhance light output power of GaN-based light-emitting diodes (LEDs). Nanoimprint lithography (NIL) was used to form patterned CBLs (a diameter of 260 nm, a period of 600, and a height of 180 nm). LEDs (chip size: 300 x 800 µm2) fabricated with no CBL, a conventional SiO2 CBL, and a patterned SiO2 CBL, respectively, exhibited forward-bias voltages of 3.02, 3.1 and 3.1 V at an injection current of 20 mA. The LEDs without and with CBLs gave series resistances of 9.8 and 11.0 Ω, respectively. The LEDs with a patterned SiO2 CBL yielded 39.6 and 11.9% higher light output powers at 20 mA, respectively, than the LEDs with no CBL and conventional SiO2 CBL. On the basis of emission images and angular transmittance results, the patterned CBL-induced output enhancement is attributed to the enhanced light extraction and current spreading.

Original languageEnglish
Pages (from-to)17556-17561
Number of pages6
JournalOptics Express
Issue number15
Publication statusPublished - 2017 Jul 24


ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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