Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

Van Ben Chu, Jin Woo Cho, Se Jin Park, Hoo Keun Park, Young Rag Do, Byoung Koun Min

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4 Citations (Scopus)


We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn x Ga1-x S2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS-ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.

Original languageEnglish
Pages (from-to)49-56
Number of pages8
JournalResearch on Chemical Intermediates
Issue number1
Publication statusPublished - 2014 Jan 1



  • CIGS
  • Gap filling
  • ITO nanorods
  • Solar cells
  • Superstrate-type

ASJC Scopus subject areas

  • Chemistry(all)

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