Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban, Hyun G. Hong, Do Young Noh, Tae Yeon Seong, June O. Song, Donghwan Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

Original languageEnglish
Pages (from-to)921-924
Number of pages4
JournalSemiconductor Science and Technology
Volume20
Issue number9
DOIs
Publication statusPublished - 2005 Sep 1

Fingerprint

Zinc Oxide
Indium
Ohmic contacts
Zinc oxide
Ultraviolet radiation
zinc oxides
indium oxides
indium
electric contacts
interlayers
Diodes
light emitting diodes
Contact resistance
Photoelectron spectroscopy
contact resistance
photoelectric emission
Annealing
injection
Transmission electron microscopy
reflectance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes. / Ban, Keun Yong; Hong, Hyun G.; Noh, Do Young; Seong, Tae Yeon; Song, June O.; Kim, Donghwan.

In: Semiconductor Science and Technology, Vol. 20, No. 9, 01.09.2005, p. 921-924.

Research output: Contribution to journalArticle

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AU - Seong, Tae Yeon

AU - Song, June O.

AU - Kim, Donghwan

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AB - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

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