Abstract
We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.
| Original language | English |
|---|---|
| Pages (from-to) | 921-924 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 20 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2005 Sep 1 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes. / Ban, Keun Yong; Hong, Hyun G.; Noh, Do Young; Seong, Tae Yeon; Song, June O.; Kim, Donghwan.
In: Semiconductor Science and Technology, Vol. 20, No. 9, 01.09.2005, p. 921-924.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes
AU - Ban, Keun Yong
AU - Hong, Hyun G.
AU - Noh, Do Young
AU - Seong, Tae Yeon
AU - Song, June O.
AU - Kim, Donghwan
PY - 2005/9/1
Y1 - 2005/9/1
N2 - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.
AB - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.
UR - http://www.scopus.com/inward/record.url?scp=23944527303&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=23944527303&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/20/9/006
DO - 10.1088/0268-1242/20/9/006
M3 - Article
AN - SCOPUS:23944527303
VL - 20
SP - 921
EP - 924
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
ER -