Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban, Hyun G. Hong, Do Young Noh, Tae Yeon Seong, June O. Song, Donghwan Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)


We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

Original languageEnglish
Pages (from-to)921-924
Number of pages4
JournalSemiconductor Science and Technology
Issue number9
Publication statusPublished - 2005 Sep 1


ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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