Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban; Hyun Gi Hong; Do Young Noh; Tae Yeon Seong; June O. Song; Donghwan Kim

doi:10.1088/0268-1242/20/9/006

Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

Keun Yong Ban, Hyun Gi Hong, Do Young Noh, Tae Yeon Seong, June O. Song, Donghwan Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10^-4 Ω cm² upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

Original language	English
Pages (from-to)	921-924
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	20
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/20/9/006
Publication status	Published - 2005 Sep 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes",

abstract = "We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.",

author = "Ban, {Keun Yong} and Hong, {Hyun Gi} and Noh, {Do Young} and Seong, {Tae Yeon} and Song, {June O.} and Donghwan Kim",

year = "2005",

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T1 - Use of an indium zinc oxide interlayer for forming Ag-based Ohmic contacts to p-type GaN for UV-light-emitting diodes

AU - Ban, Keun Yong

AU - Hong, Hyun Gi

AU - Noh, Do Young

AU - Seong, Tae Yeon

AU - Song, June O.

AU - Kim, Donghwan

PY - 2005/9/1

Y1 - 2005/9/1

N2 - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

AB - We have investigated indium-doped ZnO(IZO)/Ag Ohmic contacts to p-type GaN for use in UV-light-emitting diodes (LEDs). The as-deposited sample shows rectifying behaviour. However, the samples become Ohmic when annealed at temperature of 330-530 °C for 1 min in air. For example, the contact produces specific contact resistance of 5.51 × 10-4 Ω cm2 upon annealing at 530 °C. In addition, the 530 °C annealed IZO/Ag contacts give reflectance of 82.3% at a wavelength of 405 nm, which is better than that (70.6%) of the single Ag contacts. Near-UV LEDs fabricated with the IZO/Ag contacts give forward voltage of 3.24 V at an injection current of 20 mA, which is better than that with the single Ag contacts. On the basis of x-ray photoemission spectroscopy and scanning transmission electron microscopy results, possible Ohmic formation mechanisms are described.

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