Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode

Dae Hyun Kim, Jaecheon Han, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrated the improved performance of near UV (365 nm) InGaN/AlGaN-based LEDs using highly reflective Al-based p-type reflectors with graphene sheets as a diffusion barrier. The use of graphene sheets did not degrade the reflectance of ITO/Al contacts, viz. ∼81% at 365 nm. The ITO/graphene/Al contacts annealed at 300 °C exhibited better ohmic behavior with a specific contact resistance of 1.5 × 10-3 Ωcm 2 than the ITO/Al contact (with 9.5 × 10-3 Ωcm2). Near UV LEDs fabricated with the ITO/graphene/Al contact annealed at 300 °C showed a 7.2% higher light output (at 0.1 W) than LEDs with the ITO/Al reflector annealed at 300 °C. The SIMS results exhibited that, unlike the ITO/graphene/Al, the ITO/Al contacts undergo a significant indiffusion of Al atoms toward the GaN after annealing. Furthermore, both Ga and Mg atoms were also more extensively outdiffused in the ITO/Al contacts after annealing. On the basis of the SIMS and electrical results, the possible explanations for the annealing-induced degradation of the ITO/Al contacts are described and discussed.

Original languageEnglish
Pages (from-to)1176-1180
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number9
DOIs
Publication statusPublished - 2014 Jan 1

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Graphite
ITO (semiconductors)
Graphene
reflectors
Light emitting diodes
graphene
light emitting diodes
Annealing
Secondary ion mass spectrometry
Atoms
Diffusion barriers
Contact resistance
secondary ion mass spectrometry
annealing
aluminum gallium nitride
Degradation
contact resistance
atoms
degradation
reflectance

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Use of graphene for forming Al-based p-type reflectors for near ultraviolet InGaN/AlGaN-based light-emitting diode. / Kim, Dae Hyun; Han, Jaecheon; Seong, Tae Yeon.

In: Current Applied Physics, Vol. 14, No. 9, 01.01.2014, p. 1176-1180.

Research output: Contribution to journalArticle

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