The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure that improves breakdown voltage effectively without increase of the on-state voltage in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of this device, an implant step is included to add the shielding layer to device. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows improvement on breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.