Use of the p-floating shielding layer for improving electric field concentration of the recessed gate

Sang Jun Hwang, Seung Woo Yu, Jae In Lee, Ey Goo Kang, Man Young Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because it doesn't have a JFET region. But due to the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure that improves breakdown voltage effectively without increase of the on-state voltage in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of this device, an implant step is included to add the shielding layer to device. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows improvement on breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages13-16
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 22
EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
Duration: 2008 Jun 22008 Jun 4

Other

OtherIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
CountryFrance
CityMinatec Grenoble
Period08/6/208/6/4

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Keywords

  • IGBT
  • p floating
  • Recessed gate
  • Shielding layer

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Cite this

Hwang, S. J., Yu, S. W., Lee, J. I., Kang, E. G., & Sung, M. Y. (2008). Use of the p-floating shielding layer for improving electric field concentration of the recessed gate. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 13-16). [4567235] https://doi.org/10.1109/ICICDT.2008.4567235