Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode

Jun Yong Kim; Jae Seong Park; Jin Young Na; Sun Kyung Kim; Daesung Kang; Tae Yeon Seong

doi:10.1016/j.mee.2016.11.015

Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode

Jun Yong Kim, Jae Seong Park, Jin Young Na, Sun Kyung Kim, Daesung Kang, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this study, we introduced mesh-patterned Ag grid (width: 15–20 μm) to enhance the light output power of near ultraviolet (385 nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500 °C for 1 min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385 nm, the samples had transmittances of 54.2–74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32–3.57 V at 20 mA than LED with the ITO electrode (3.64 V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.6–15.9% higher light output (at 400 mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Microelectronic Engineering
Volume	169
DOIs	https://doi.org/10.1016/j.mee.2016.11.015
Publication status	Published - 2017 Feb 5

Keywords

Ag-grid
Agglomeration
Current spreading
Light emitting diode

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2016.11.015

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title = "Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode",

abstract = "In this study, we introduced mesh-patterned Ag grid (width: 15–20 μm) to enhance the light output power of near ultraviolet (385 nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500 °C for 1 min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385 nm, the samples had transmittances of 54.2–74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32–3.57 V at 20 mA than LED with the ITO electrode (3.64 V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.6–15.9% higher light output (at 400 mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed.",

keywords = "Ag-grid, Agglomeration, Current spreading, Light emitting diode",

author = "Kim, {Jun Yong} and Park, {Jae Seong} and Na, {Jin Young} and Kim, {Sun Kyung} and Daesung Kang and Seong, {Tae Yeon}",

year = "2017",

month = feb,

day = "5",

doi = "10.1016/j.mee.2016.11.015",

language = "English",

volume = "169",

pages = "29--33",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode

AU - Kim, Jun Yong

AU - Park, Jae Seong

AU - Na, Jin Young

AU - Kim, Sun Kyung

AU - Kang, Daesung

AU - Seong, Tae Yeon

PY - 2017/2/5

Y1 - 2017/2/5

N2 - In this study, we introduced mesh-patterned Ag grid (width: 15–20 μm) to enhance the light output power of near ultraviolet (385 nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500 °C for 1 min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385 nm, the samples had transmittances of 54.2–74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32–3.57 V at 20 mA than LED with the ITO electrode (3.64 V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.6–15.9% higher light output (at 400 mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed.

AB - In this study, we introduced mesh-patterned Ag grid (width: 15–20 μm) to enhance the light output power of near ultraviolet (385 nm) AlGaN-based light emitting diode (LEDs). The Ag grid was intentionally agglomerated by annealing at 500 °C for 1 min in air. The output performance of AlGaN-based LEDs fabricated with Ag-grid/indium tin oxide (ITO) electrodes was compared with those with ITO electrode. At a wavelength of 385 nm, the samples had transmittances of 54.2–74.1%. LEDs with the Ag-grid/ITO contacts exhibited lower forward voltages of 3.32–3.57 V at 20 mA than LED with the ITO electrode (3.64 V). The LEDs with the Ag-grid/ITO electrodes exhibited 15.6–15.9% higher light output (at 400 mW) than that with the ITO electrode. Based on finite-difference time-domain simulations, the improved output performance is briefly described and discussed.

KW - Ag-grid

KW - Agglomeration

KW - Current spreading

KW - Light emitting diode

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EP - 33

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Using agglomerated Ag grid to improve the light output of near ultraviolet AlGaN-based light-emitting diode

Abstract

Keywords

ASJC Scopus subject areas

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