UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen, Fan Ren, Gou Chung Chi, Sheng Chun Hung, Y. P. Huang, Ji Hyun Kim, Ivan I. Kravchenko, Stephen J. Pearton

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

Original languageEnglish
Article number060604
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Contact resistance
contact resistance
Ozone
Graphene
ozone
graphene
Sheet resistance
cleaning
electric contacts
Cleaning
Annealing
annealing
Substrates
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

UV ozone treatment for improving contact resistance on graphene. / Chen, Chung Wei; Ren, Fan; Chi, Gou Chung; Hung, Sheng Chun; Huang, Y. P.; Kim, Ji Hyun; Kravchenko, Ivan I.; Pearton, Stephen J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 6, 060604, 01.11.2012.

Research output: Contribution to journalArticle

Chen, Chung Wei ; Ren, Fan ; Chi, Gou Chung ; Hung, Sheng Chun ; Huang, Y. P. ; Kim, Ji Hyun ; Kravchenko, Ivan I. ; Pearton, Stephen J. / UV ozone treatment for improving contact resistance on graphene. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2012 ; Vol. 30, No. 6.
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