UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen, Fan Ren, Gou Chung Chi, Sheng Chun Hung, Y. P. Huang, Ji Hyun Kim, Ivan I. Kravchenko, Stephen J. Pearton

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31 Citations (Scopus)

Abstract

Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

Original languageEnglish
Article number060604
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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