UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen; Fan Ren; Gou Chung Chi; Sheng Chun Hung; Y. P. Huang; Jihyun Kim; Ivan I. Kravchenko; Stephen J. Pearton

doi:10.1116/1.4754566

UV ozone treatment for improving contact resistance on graphene

Chung Wei Chen, Fan Ren, Gou Chung Chi, Sheng Chun Hung, Y. P. Huang, Jihyun Kim, Ivan I. Kravchenko, Stephen J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Optimized UV ozone cleaning of graphene layers on SiO₂/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10^-6 Ω-cm ²) compared to untreated surfaces (4 × 10^-3 Ω-cm²). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10^-7 Ω-cm². Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

Original language	English
Article number	060604
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	6
DOIs	https://doi.org/10.1116/1.4754566
Publication status	Published - 2012 Nov

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4754566

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title = "UV ozone treatment for improving contact resistance on graphene",

abstract = "Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.",

author = "Chen, {Chung Wei} and Fan Ren and Chi, {Gou Chung} and Hung, {Sheng Chun} and Huang, {Y. P.} and Jihyun Kim and Kravchenko, {Ivan I.} and Pearton, {Stephen J.}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018, NSF contract number ECCS 0901711 monitored by Dr. Yogesh B. Gianchandani and by NSF (J.M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which was sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.",

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T1 - UV ozone treatment for improving contact resistance on graphene

AU - Chen, Chung Wei

AU - Ren, Fan

AU - Chi, Gou Chung

AU - Hung, Sheng Chun

AU - Huang, Y. P.

AU - Kim, Jihyun

AU - Kravchenko, Ivan I.

AU - Pearton, Stephen J.

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Grant No. NSC 100-2112-M-009-018, NSF contract number ECCS 0901711 monitored by Dr. Yogesh B. Gianchandani and by NSF (J.M. Zavada). A portion of this research was conducted at the Center for Nanophase Materials Sciences, which was sponsored at Oak Ridge National Laboratory by the Office of Basic Energy Sciences, U.S. Department of Energy.

PY - 2012/11

Y1 - 2012/11

N2 - Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

AB - Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 × 10-6 Ω-cm 2) compared to untreated surfaces (4 × 10-3 Ω-cm2). Subsequent annealing at 300 °C lowers the minimum value achieved to 7 × 10-7 Ω-cm2. Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene.

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ER -

UV ozone treatment for improving contact resistance on graphene

Abstract

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