V-grooved GaAs/AlGaAs quantum wire laser array confined by junction-isolation stripes

Tae Geun Kim, E. K. Kim, S. K. Min, Jung ho Park

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A new GaAs/AlGaAs quantum wire laser array (QWLA) confined by p-n junction-isolation stripes is reported. The QWLA is fabricated with 1.5 μm wide stripe-channels through the quantum wire (QWR) active regions using two-step MOCVD growth with a wet etching technique. Prior to the device fabrication, active channel- and leakage-current are calculated using a d.c. equivalent circuit to quantitatively estimate the current-confinement effect. QWLA consisting of 10 QWRs has currently demonstrated a maximum output power as high as 18.2 mW at 385 mA and a threshold current density as low as 0.23 kA m-2 facet-1 under room temperature pulsed operation.

Original languageEnglish
Pages (from-to)1079-1081
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number8
Publication statusPublished - 1997 Aug 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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