van der Waals heteroepitaxy of semiconductor nanowires

Young Joon Hong, Chul Ho Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

van der Waals (vdW) heteroepitaxy of semiconductors enables the integration of the semiconductor electronic and optoelectronic devices on virtually arbitrary substrates. In this chapter, we provide a review on recent progresses in the vdW epitaxy of semiconductor nanowires on two-dimensional atomic-layered materials (2d-ALMs). The efforts and challenges in various approaches for vdW epitaxy of semiconductor nanowires are reviewed. We pay particular attention in complementary studies on microscopically observed and theoretically simulated vdW epitaxial heterointerfaces. The methods of controlling the nucleation-growth processes for site-selective vdW epitaxy are discussed, followed by a brief review on optoelectronic device applications. The new opportunities and strategies for the vdW heteroepitaxial integration of semiconductors on 2d-ALMs are further discussed toward emerging functional electronics and optoelectronics.

Original languageEnglish
Title of host publicationSemiconductor Nanowires I Growth and Theory, 2015
EditorsAnna Fontcuberta I. Morral, Shadi A. Dayeh, Chennupati Jagadish
PublisherAcademic Press Inc.
Pages125-172
Number of pages48
ISBN (Print)9780128030271
DOIs
Publication statusPublished - 2015

Publication series

NameSemiconductors and Semimetals
Volume93
ISSN (Print)0080-8784

Keywords

  • Atomic-layered materials
  • Graphene
  • Hexagonal boron nitride
  • Indium arsenide
  • Semiconductor nanowires
  • Van der Waals epitaxy
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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