In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including f T and f max , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage V T variation. The observed V T variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.
- Substrate coupling
- substrate noise
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics