Variation in RF performance of MOSFETs due to substrate digital noise coupling

Yongho Oh; Sanggeun Jeon; Jae Sung Rieh

doi:10.1109/LMWC.2010.2049431

Variation in RF performance of MOSFETs due to substrate digital noise coupling

Yongho Oh, Sanggeun Jeon, Jae Sung Rieh

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including f_T and f_max , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage V_T variation. The observed V_T variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

Original language	English
Article number	5481971
Pages (from-to)	384-386
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	20
Issue number	7
DOIs	https://doi.org/10.1109/LMWC.2010.2049431
Publication status	Published - 2010 Jul

Keywords

Substrate coupling
substrate noise

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/LMWC.2010.2049431

Cite this

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title = "Variation in RF performance of MOSFETs due to substrate digital noise coupling",

abstract = "In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including fT and fmax , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage VT variation. The observed VT variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.",

keywords = "Substrate coupling, substrate noise",

author = "Yongho Oh and Sanggeun Jeon and Rieh, {Jae Sung}",

note = "Funding Information: Manuscript received December 31, 2009; revised April 07, 2010. First published June 07, 2010; current version published July 08, 2010. This work was supported by the IT R&D Program of MKE/IITA (2008-F006-02). The authors are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: jsrieh@korea.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2010.2049431",

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doi = "10.1109/LMWC.2010.2049431",

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AU - Jeon, Sanggeun

AU - Rieh, Jae Sung

N1 - Funding Information: Manuscript received December 31, 2009; revised April 07, 2010. First published June 07, 2010; current version published July 08, 2010. This work was supported by the IT R&D Program of MKE/IITA (2008-F006-02). The authors are with the School of Electrical Engineering, Korea University, Seoul 136-701, Korea (e-mail: jsrieh@korea.ac.kr). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LMWC.2010.2049431

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N2 - In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including fT and fmax , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage VT variation. The observed VT variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

AB - In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including fT and fmax , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage VT variation. The observed VT variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

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Variation in RF performance of MOSFETs due to substrate digital noise coupling

Abstract

Keywords

ASJC Scopus subject areas

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