Variation in RF performance of MOSFETs due to substrate digital noise coupling

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this letter, the variation in the key RF performance parameters of MOSFETs in the presence of the substrate digital noise coupling is investigated. The parameters, including f T and f max , showed substantial change up to ∼20% with realistic level of noise injection. It is shown that such change in the RF performance with the noise injection is due to the threshold voltage V T variation. The observed V T variation is attributed to the virtual body effect due to the substrate potential fluctuation by the coupled substrate digital noise.

Original languageEnglish
Article number5481971
Pages (from-to)384-386
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume20
Issue number7
DOIs
Publication statusPublished - 2010 Jul 1

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field effect transistors
Substrates
injection
Threshold voltage
threshold voltage

Keywords

  • Substrate coupling
  • substrate noise

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Variation in RF performance of MOSFETs due to substrate digital noise coupling. / Oh, Yongho; Jeon, Sanggeun; Rieh, Jae-Sung.

In: IEEE Microwave and Wireless Components Letters, Vol. 20, No. 7, 5481971, 01.07.2010, p. 384-386.

Research output: Contribution to journalArticle

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