Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al2O3/Si3N4/SiO2/poly-Si capacitors

Suk Bum Hong, Ju Hyun Park, Tae Ho Lee, Jun Hee Lim, Changhwan Shin, Young Woo Park, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


This study presents the improved memory properties of TiN/Al2O3/Si3N4/SiO2/poly-Si (TANOS) capacitors after rapid thermal annealing (RTA) and high-pressure annealing processes (HPAP) using H2 and D2 molecules. First, it was confirmed that the recrystallization rate, and thus the grain size of the poly-silicon (poly-Si) film, increased with an increase of the RTA temperature, eventually improving the performance of the TANOS capacitor by reducing the trap densities at the poly-Si/SiO2 interface. Then, it was found that device performance parameters, such as program/erase speed and data retention, could be further improved through HPAP owing to the passivation of band gap states at the poly-Si channel grain boundary. Finally, it was confirmed that these improvements can be observed at a transistor level in the same fashion using the Silvaco TCAD simulation.

Original languageEnglish
Pages (from-to)104-110
Number of pages7
JournalApplied Surface Science
Publication statusPublished - 2019 May 31


  • Grain boundary
  • Interface trap
  • Poly-silicon channel
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al<sub>2</sub>O<sub>3</sub>/Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub>/poly-Si capacitors'. Together they form a unique fingerprint.

Cite this