Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature

Jun Young Choi, Sang Sig Kim, Sang Yeol Lee

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (Vth) and field effect mobility (μFE) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (Vth) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs.

Original languageEnglish
Pages (from-to)489-491
Number of pages3
JournalElectronic Materials Letters
Volume9
Issue number4
DOIs
Publication statusPublished - 2013 Jul

Keywords

  • SiO
  • oxide thin film transistor
  • solution process
  • threshold voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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