Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Min Ju Kim, Ju Hyun Park, Dong Su Jeon, Tae Ho Lee, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

Original languageEnglish
Title of host publication2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2
ISBN (Print)9781467371094
DOIs
Publication statusPublished - 2016 Jan 7
Event11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of
Duration: 2015 Aug 242015 Aug 28

Other

Other11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
CountryKorea, Republic of
CityBusan
Period15/8/2415/8/28

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Kim, M. J., Park, J. H., Jeon, D. S., Lee, T. H., & Kim, T. G. (2016). Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 (Vol. 2). [7376173] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7376173