Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

Min Ju Kim, Ju Hyun Park, Dong Su Jeon, Tae Ho Lee, Tae Geun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

Original languageEnglish
Title of host publication2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Volume2
ISBN (Print)9781467371094
DOIs
Publication statusPublished - 2016 Jan 7
Event11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of
Duration: 2015 Aug 242015 Aug 28

Other

Other11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
CountryKorea, Republic of
CityBusan
Period15/8/2415/8/28

Fingerprint

Tin oxides
ultraviolet radiation
indium oxides
Indium
tin oxides
Light emitting diodes
light emitting diodes
Electrodes
electrodes
transmittance
Metals
metals
Sheet resistance
Quartz
quartz
wafers
Substrates
Ultraviolet Rays

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Kim, M. J., Park, J. H., Jeon, D. S., Lee, T. H., & Kim, T. G. (2016). Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 (Vol. 2). [7376173] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CLEOPR.2015.7376173

Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. / Kim, Min Ju; Park, Ju Hyun; Jeon, Dong Su; Lee, Tae Ho; Kim, Tae Geun.

2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2016. 7376173.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, MJ, Park, JH, Jeon, DS, Lee, TH & Kim, TG 2016, Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. in 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. vol. 2, 7376173, Institute of Electrical and Electronics Engineers Inc., 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Busan, Korea, Republic of, 15/8/24. https://doi.org/10.1109/CLEOPR.2015.7376173
Kim MJ, Park JH, Jeon DS, Lee TH, Kim TG. Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. In 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 2. Institute of Electrical and Electronics Engineers Inc. 2016. 7376173 https://doi.org/10.1109/CLEOPR.2015.7376173
Kim, Min Ju ; Park, Ju Hyun ; Jeon, Dong Su ; Lee, Tae Ho ; Kim, Tae Geun. / Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2016.
@inproceedings{487c73537cac4b27b243ef08070dd15a,
title = "Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes",
abstract = "We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7{\%} transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.",
author = "Kim, {Min Ju} and Park, {Ju Hyun} and Jeon, {Dong Su} and Lee, {Tae Ho} and Kim, {Tae Geun}",
year = "2016",
month = "1",
day = "7",
doi = "10.1109/CLEOPR.2015.7376173",
language = "English",
isbn = "9781467371094",
volume = "2",
booktitle = "2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes

AU - Kim, Min Ju

AU - Park, Ju Hyun

AU - Jeon, Dong Su

AU - Lee, Tae Ho

AU - Kim, Tae Geun

PY - 2016/1/7

Y1 - 2016/1/7

N2 - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

AB - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.

UR - http://www.scopus.com/inward/record.url?scp=84964057120&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964057120&partnerID=8YFLogxK

U2 - 10.1109/CLEOPR.2015.7376173

DO - 10.1109/CLEOPR.2015.7376173

M3 - Conference contribution

AN - SCOPUS:84964057120

SN - 9781467371094

VL - 2

BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -