TY - GEN
T1 - Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes
AU - Kim, Min Ju
AU - Park, Ju Hyun
AU - Jeon, Dong Su
AU - Lee, Tae Ho
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by a government grant from the National Research Foundation of Korea (NRF) (No. 2011-0028769)
PY - 2016/1/7
Y1 - 2016/1/7
N2 - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
AB - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
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U2 - 10.1109/CLEOPR.2015.7376173
DO - 10.1109/CLEOPR.2015.7376173
M3 - Conference contribution
AN - SCOPUS:84964057120
T3 - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
Y2 - 24 August 2015 through 28 August 2015
ER -