Abstract
We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
| Original language | English |
|---|---|
| Title of host publication | 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Volume | 2 |
| ISBN (Print) | 9781467371094 |
| DOIs | |
| Publication status | Published - 2016 Jan 7 |
| Event | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 - Busan, Korea, Republic of Duration: 2015 Aug 24 → 2015 Aug 28 |
Other
| Other | 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 |
|---|---|
| Country | Korea, Republic of |
| City | Busan |
| Period | 15/8/24 → 15/8/28 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes. / Kim, Min Ju; Park, Ju Hyun; Jeon, Dong Su; Lee, Tae Ho; Kim, Tae Geun.
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015. Vol. 2 Institute of Electrical and Electronics Engineers Inc., 2016. 7376173.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Various metal-doped ITO as transparent conductive electrode for near-ultraviolet light emitting diodes
AU - Kim, Min Ju
AU - Park, Ju Hyun
AU - Jeon, Dong Su
AU - Lee, Tae Ho
AU - Kim, Tae Geun
PY - 2016/1/7
Y1 - 2016/1/7
N2 - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
AB - We fabricated under various metal doped indium tin oxide (ITO) transparent conductive electrodes (TCE) for use in near-ultraviolet (NUV) light emitting diodes (LEDs). The role of metal is to improve the transmittance especially in NUV region and current spreading of ITO. The ITO/metal (Ti, Ga, Ge, Al) TCEs (annealed at 550°C, 1 min) exhibit 90.5 ∼ 94.7% transmittance at 385 nm on the quartz substrate and the sheet resistance is ranged from 23.2 to 73.5 ω/□ on the NUV LED wafer.
UR - http://www.scopus.com/inward/record.url?scp=84964057120&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84964057120&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.2015.7376173
DO - 10.1109/CLEOPR.2015.7376173
M3 - Conference contribution
AN - SCOPUS:84964057120
SN - 9781467371094
VL - 2
BT - 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
PB - Institute of Electrical and Electronics Engineers Inc.
ER -