Vertical and lateral mobilities in n-(Ga, Mn)N

Ji Hyun Kim, F. Ren, G. T. Thaler, R. Frazier, C. R. Abernathy, S. J. Pearton, J. M. Zavada, R. G. Wilson

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.

Original languageEnglish
Pages (from-to)1565-1567
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number10
DOIs
Publication statusPublished - 2003 Mar 10
Externally publishedYes

Fingerprint

Schottky diodes
electron mobility
electrical measurement
Hall effect
transport properties
scattering

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, J. H., Ren, F., Thaler, G. T., Frazier, R., Abernathy, C. R., Pearton, S. J., ... Wilson, R. G. (2003). Vertical and lateral mobilities in n-(Ga, Mn)N. Applied Physics Letters, 82(10), 1565-1567. https://doi.org/10.1063/1.1559442

Vertical and lateral mobilities in n-(Ga, Mn)N. / Kim, Ji Hyun; Ren, F.; Thaler, G. T.; Frazier, R.; Abernathy, C. R.; Pearton, S. J.; Zavada, J. M.; Wilson, R. G.

In: Applied Physics Letters, Vol. 82, No. 10, 10.03.2003, p. 1565-1567.

Research output: Contribution to journalArticle

Kim, JH, Ren, F, Thaler, GT, Frazier, R, Abernathy, CR, Pearton, SJ, Zavada, JM & Wilson, RG 2003, 'Vertical and lateral mobilities in n-(Ga, Mn)N', Applied Physics Letters, vol. 82, no. 10, pp. 1565-1567. https://doi.org/10.1063/1.1559442
Kim JH, Ren F, Thaler GT, Frazier R, Abernathy CR, Pearton SJ et al. Vertical and lateral mobilities in n-(Ga, Mn)N. Applied Physics Letters. 2003 Mar 10;82(10):1565-1567. https://doi.org/10.1063/1.1559442
Kim, Ji Hyun ; Ren, F. ; Thaler, G. T. ; Frazier, R. ; Abernathy, C. R. ; Pearton, S. J. ; Zavada, J. M. ; Wilson, R. G. / Vertical and lateral mobilities in n-(Ga, Mn)N. In: Applied Physics Letters. 2003 ; Vol. 82, No. 10. pp. 1565-1567.
@article{4443371a9d33416fac14877172a14b0c,
title = "Vertical and lateral mobilities in n-(Ga, Mn)N",
abstract = "The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.",
author = "Kim, {Ji Hyun} and F. Ren and Thaler, {G. T.} and R. Frazier and Abernathy, {C. R.} and Pearton, {S. J.} and Zavada, {J. M.} and Wilson, {R. G.}",
year = "2003",
month = "3",
day = "10",
doi = "10.1063/1.1559442",
language = "English",
volume = "82",
pages = "1565--1567",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Vertical and lateral mobilities in n-(Ga, Mn)N

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Thaler, G. T.

AU - Frazier, R.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Zavada, J. M.

AU - Wilson, R. G.

PY - 2003/3/10

Y1 - 2003/3/10

N2 - The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.

AB - The lateral and vertical electron mobilities in thick n-(Ga, Mn)N films were investigated using Hall effect and Schottky barrier diodes. The effect of dislocation scattering on electron mobility in (Ga, Mn)N was examined by comparison of vertical and lateral transport properties. The vertical mobilities were obtained by performing the current-voltage measurements in the Schottky diode structures.

UR - http://www.scopus.com/inward/record.url?scp=0037429986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037429986&partnerID=8YFLogxK

U2 - 10.1063/1.1559442

DO - 10.1063/1.1559442

M3 - Article

AN - SCOPUS:0037429986

VL - 82

SP - 1565

EP - 1567

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

ER -