Vertical conduction behavior through atomic graphene device under transverse electric field

Yun-Hi Lee, Yoon Joong Kim, J. H. Lee

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Many studies have characterized disordered graphene layers as variable-range hopping and activated hopping conduction for a graphene structure with planar left and right electrodes. We report the electrical transport measurements of atomic-thick-graphene with top and bottom Ti/Pt electrodes. In the vertical device of metal-graphene-metal under a transverse electric field, the current at the low field or high temperature was explained by bulk-limited conduction, so called Ohmic current. On the other hand, space-charge-limited- conduction dominated at low temperatures or under high fields. The estimated trap concentration for the high field or low temperature conduction was approximately 3.7× 1017 cm-3, and from a cessation of the power law dependence in the J-V characteristics it was determined that the onset of failure breakdown of the vertical GL structure began after dissipating power of 2.7× 1012 W m-3.

Original languageEnglish
Article number133112
JournalApplied Physics Letters
Volume98
Issue number13
DOIs
Publication statusPublished - 2011 Mar 28

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graphene
conduction
electric fields
temperature distribution
electrodes
metals
space charge
breakdown
traps

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Vertical conduction behavior through atomic graphene device under transverse electric field. / Lee, Yun-Hi; Kim, Yoon Joong; Lee, J. H.

In: Applied Physics Letters, Vol. 98, No. 13, 133112, 28.03.2011.

Research output: Contribution to journalArticle

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