Vertical-geometry GaN-based light-emitting diodes: Improving current injection and light extraction efficiencies

Y. W. Choi, W. S. Yum, Tae Yeon Seong

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of an indium middle layer on the structural, thermal and electrical properties of Ag contacts for high-power GaN-based vertical LEDs was investigated. As the temperature increases, agglomeration is initiated by the formation of hillocks, followed by the generation of holes, leading to agglomeration. The In layer effectively prevents agglomeration. Consequently, the In-inserted Ag reflectors exhibit better reflectivity at 500°C than Ag only contacts. The In-inserted Ag sample was less <111>-textured than the Ag only sample. On the basis of the scanning electron microscopy, and X-ray phi scan and pole figure results, the improved stability is described by means of the <111>-texture and the modification of the surface energy of Ag films. The In-inserted Ag reflectors exhibit better specific contact resistivity at 500°C than Ag only contacts. The output power (at 20 mA) of LEDs with the In-inserted Ag contacts is higher than that of LEDs with Ag only contacts.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages85-92
Number of pages8
Volume61
Edition4
DOIs
Publication statusPublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
CountryUnited States
CityOrlando
Period14/5/1114/5/15

Fingerprint

Light emitting diodes
Agglomeration
Geometry
Interfacial energy
Indium
Structural properties
Poles
Electric properties
Thermodynamic properties
Textures
X rays
Scanning electron microscopy
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Choi, Y. W., Yum, W. S., & Seong, T. Y. (2014). Vertical-geometry GaN-based light-emitting diodes: Improving current injection and light extraction efficiencies. In ECS Transactions (4 ed., Vol. 61, pp. 85-92). Electrochemical Society Inc.. https://doi.org/10.1149/06104.0085ecst

Vertical-geometry GaN-based light-emitting diodes : Improving current injection and light extraction efficiencies. / Choi, Y. W.; Yum, W. S.; Seong, Tae Yeon.

ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. p. 85-92.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Choi, YW, Yum, WS & Seong, TY 2014, Vertical-geometry GaN-based light-emitting diodes: Improving current injection and light extraction efficiencies. in ECS Transactions. 4 edn, vol. 61, Electrochemical Society Inc., pp. 85-92, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting, Orlando, United States, 14/5/11. https://doi.org/10.1149/06104.0085ecst
Choi, Y. W. ; Yum, W. S. ; Seong, Tae Yeon. / Vertical-geometry GaN-based light-emitting diodes : Improving current injection and light extraction efficiencies. ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. pp. 85-92
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