Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son; Sunjae Chung; Sun Young Yea; Shinhee Kim; Taehee Yoo; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3339301

Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son, Sunjae Chung, Sun Young Yea, Shinhee Kim, Taehee Yoo, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

Original language	English
Article number	092105
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3339301
Publication status	Published - 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{8ad86309733445e684835305692c252e,

title = "Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film",

abstract = "The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.",

author = "Hyunji Son and Sunjae Chung and Yea, {Sun Young} and Shinhee Kim and Taehee Yoo and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687); by the Seoul R&DB Program (10543); and by the National Science Foundation under Grant No. DMR06-03762.",

year = "2010",

doi = "10.1063/1.3339301",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

AU - Son, Hyunji

AU - Chung, Sunjae

AU - Yea, Sun Young

AU - Kim, Shinhee

AU - Yoo, Taehee

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant No. 2009-0057687); by the Seoul R&DB Program (10543); and by the National Science Foundation under Grant No. DMR06-03762.

PY - 2010

Y1 - 2010

N2 - The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

AB - The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

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U2 - 10.1063/1.3339301

DO - 10.1063/1.3339301

M3 - Article

AN - SCOPUS:77949409760

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

M1 - 092105

ER -

Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

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