Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son, Sunjae Chung, Sun Young Yea, Shinhee Kim, Taehee Yoo, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

Original languageEnglish
Article number092105
JournalApplied Physics Letters
Volume96
Issue number9
DOIs
Publication statusPublished - 2010 Mar 19

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Hall resistance
gradients
anisotropy
Hall effect
free energy
diagrams

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film. / Son, Hyunji; Chung, Sunjae; Yea, Sun Young; Kim, Shinhee; Yoo, Taehee; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Applied Physics Letters, Vol. 96, No. 9, 092105, 19.03.2010.

Research output: Contribution to journalArticle

Son, Hyunji ; Chung, Sunjae ; Yea, Sun Young ; Kim, Shinhee ; Yoo, Taehee ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film. In: Applied Physics Letters. 2010 ; Vol. 96, No. 9.
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