Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son; Sunjae Chung; Sun Young Yea; Shinhee Kim; Taehee Yoo; Sang Hoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.3339301

Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film

Hyunji Son, Sunjae Chung, Sun Young Yea, Shinhee Kim, Taehee Yoo, Sang Hoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

The properties of magnetic anisotropy of GaMnAs films along the growth direction were studied by Hall effect measurements. The magnetic anisotropy fields were obtained by analyzing the angular dependence of the planar Hall resistance and the anomalous Hall resistance for in-plane and out-of plane components of the Hall signal, respectively. The magnetic anisotropy fields obtained by this process were used to construct a three-dimensional magnetic free energy diagram, which clearly shows that the out-of-plane characteristics of magnetic anisotropy become more pronounced as we approach the bottom part of the film.

Original language	English
Article number	092105
Journal	Applied Physics Letters
Volume	96
Issue number	9
DOIs	https://doi.org/10.1063/1.3339301
Publication status	Published - 2010 Mar 19

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Son, H., Chung, S., Yea, S. Y., Kim, S., Yoo, T., Lee, S. H., Liu, X., & Furdyna, J. K. (2010). Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga,Mn)As film. Applied Physics Letters, 96(9), [092105]. https://doi.org/10.1063/1.3339301

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AU - Kim, Shinhee

AU - Yoo, Taehee

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

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