Vertical growth of core-shell III-V nanowires for solar cells application

D. Y. Kim, M. H. Bae, J. C. Shin, Y. J. Kim, Y. J. Lee, K. J. Choi, T. Y. Seong, W. J. Choi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


High density (In)GaAs/GaAs/AlGaAs nanowires (NWs) consisting of n-type core and p-type shell have been vertically grown on (111) GaAs substrate using metal organic chemical vapor deposition (MOCVD) and fabricated into solar cells. Au colloidal nanoparticles (NPs) are employed as a catalyst. High density nanowires were obtained by uniform distribution of Au NPs. Fe-SEM, TEM and HRTEM images show that the morphology of shell is sensitive to p-doping concentration. Increase in the density of p-doping precursor results in "kinking" of NPs and rough shell surface. The origin of kinking has been explained by the GaAs twin phases due to Zn segregation on the surface of shell. It has been observed that the morphology of NPs can be controlled through optimizing various source purge technique of DEZn and deposition temperature. Electrical properties of core-shell doped NWs are carried out using I-V characterization. The core-shell NWs show characteristics of p-n junction as revealed by I-V studies.

Original languageEnglish
Pages (from-to)2913-2918
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Issue number4
Publication statusPublished - 2014 Apr


  • Core-shell nanowire(s)
  • III-V compound(s)
  • Nanowire(s)
  • Solar cell

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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