Vertical stacking of ZnO nanowire devices with different functionalities on plastic substrates

Youngin Jeon, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this paper, we demonstrate the vertical stacking of ZnO nanowire (NW) field-effect transistors (FETs), a ZnO NW-based nanofloating gate memory (NFGM) device, and a ZnO NW-based inverter on a flexible plastic substrate. For the vertical stacking, four ZnO NW devices are sequentially constructed on each of four layers, and these devices are isolated from each other using Al 2O3 material. Each of the stacked ZnO NW devices exhibits the good electrical characteristics with n-type depletion modes under both the flat and bent states. Moreover, the switching, memory, and inverting characteristics of the stacked ZnO NW devices are examined.

Original languageEnglish
Pages (from-to)1928-1932
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number8
DOIs
Publication statusPublished - 2014 Jan 1

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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