Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Heon Ham; Guozhen Shen; Jung Hee Cho; Tae Jae Lee; Sung Ho Seo; Cheol Jin Lee

doi:10.1016/j.cplett.2005.01.084

Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Heon Ham, Guozhen Shen, Jung Hee Cho, Tae Jae Lee, Sung Ho Seo, Cheol Jin Lee

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm², and the emission current density reached 1 mA/cm ² at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

Original language	English
Pages (from-to)	69-73
Number of pages	5
Journal	Chemical Physics Letters
Volume	404
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2005.01.084
Publication status	Published - 2005 Mar 7
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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10.1016/j.cplett.2005.01.084

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title = "Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties",

abstract = "Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.",

author = "Heon Ham and Guozhen Shen and Cho, {Jung Hee} and Lee, {Tae Jae} and Seo, {Sung Ho} and Lee, {Cheol Jin}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-037-C00017).",

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doi = "10.1016/j.cplett.2005.01.084",

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T1 - Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

AU - Ham, Heon

AU - Shen, Guozhen

AU - Cho, Jung Hee

AU - Lee, Tae Jae

AU - Seo, Sung Ho

AU - Lee, Cheol Jin

N1 - Funding Information: This work was supported by Korea Research Foundation Grant (KRF-2003-037-C00017).

PY - 2005/3/7

Y1 - 2005/3/7

N2 - Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

AB - Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600°C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.

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M3 - Article

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VL - 404

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Vertically aligned ZnO nanowires produced by a catalyst-free thermal evaporation method and their field emission properties

Abstract

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