Vertically integrated logic circuits constructed using ZnO-nanowire-based field-effect transistors on plastic substrates

Jeongmin Kang, Taeho Moon, Youngin Jeon, Hoyoung Kim, Sangsig Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

ZnO-nanowire-based logic circuits were constructed by the vertical integration of multilayered field-effect transistors (FETs) on plastic substrates. ZnO nanowires with an average diameter of ~100 nm were synthesized by thermal chemical vapor deposition for use as the channel material in FETs. The ZnO-based FETs exhibited a high ION/IOFF of >106, with the characteristic of n-type depletion modes. For vertically integrated logic circuits, three multilayer FETs were sequentially prepared. The stacked FETs were connected in series via electrodes, and C-PVPs were used for the layerisolation material. The NOT and NAND gates exhibited large logic-swing values of ~93%. These results demonstrate the feasibility of three dimensional flexible logic circuits.

Original languageEnglish
Pages (from-to)3526-3528
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May

Keywords

  • Field-effect transistor
  • Logic circuit
  • Plastic substrate
  • Vertical integration
  • ZnO nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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