Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

R. Malik, E. Gulari, P. Bhattacharya, K. K. Linder, Jae-Sung Rieh

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.

Original languageEnglish
Pages (from-to)1149-1151
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
Publication statusPublished - 1997 Mar 3
Externally publishedYes

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phosphines
molecular beam epitaxy
silicon
junction diodes
profiles
pulses
gases

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine. / Malik, R.; Gulari, E.; Bhattacharya, P.; Linder, K. K.; Rieh, Jae-Sung.

In: Applied Physics Letters, Vol. 70, No. 9, 03.03.1997, p. 1149-1151.

Research output: Contribution to journalArticle

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