Very high (>1019 cm-3) in situ n-type doping of silicon during molecular beam epitaxy using supersonic jets of phosphine

R. Malik, E. Gulari, P. Bhattacharya, K. K. Linder, J. S. Rieh

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Abstract

The use of supersonically injected pulses of phosphine to achieve uniform and high levels of n-type doping in Si during gas-source molecular beam epitaxy is demonstrated. Uniform n-type doping up to levels of 5×1019 cm-3 is obtained. SiGe/Si junction diodes made with this doping technique show good doping profiles and rectifying characteristics.

Original languageEnglish
Pages (from-to)1149-1151
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number9
DOIs
Publication statusPublished - 1997 Mar 3
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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