We report on photocurrent spectra of Be-doped p-type modulation-doped quantum dot infrared photodetector structure. We have observed a broad photocurrent signal in a photon energy range of 100-400 meV (wavelength range of 3-10 μm) due to bound-to-continuum intersubband absorption of normal incidence radiation in the valence band of InAs self-assembled quantum dots, showing a peak sensitivity around hv= 190 meV. Furthermore, the observed responsivity was as high as 16 A/W at T = 10 K, which is to our knowledge, the highest value ever reported for quantum dot infrared photodetectors.
|Number of pages||4|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2005|
|Event||31st International Symposium of Compound Semiconductors 2004 - Seoul, Korea, Republic of|
Duration: 2004 Sep 12 → 2004 Dec 16
ASJC Scopus subject areas
- Physics and Astronomy(all)