The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6-9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)