Abstract
The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6-9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
| Original language | English |
|---|---|
| Article number | 132105 |
| Journal | Applied Physics Letters |
| Volume | 96 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2010 Apr 12 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction. / Ahn, Jaehui; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.
In: Applied Physics Letters, Vol. 96, No. 13, 132105, 12.04.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Violet electroluminescence from p-GaN thin film/n-GaN nanowire homojunction
AU - Ahn, Jaehui
AU - Mastro, Michael A.
AU - Hite, Jennifer
AU - Eddy, Charles R.
AU - Kim, Ji Hyun
PY - 2010/4/12
Y1 - 2010/4/12
N2 - The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6-9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
AB - The difficulty associated with the precise positioning of nanowires has been one of the most significant issues hindering nanoelectronic integration. In this paper, we employed dielectrophoretic force to manipulate n-type GaN nano- and microwires onto a p-type GaN thin film to form a pristine p-n homojunction. The GaN wires were attracted to the n-type Ohmic metal in a direction parallel to the electric field, which was consistent with our simulation results. Violet electroluminescence emanated from the point of the n-GaN wire in contact with the p-GaN thin film. This p-n homojunction device displayed forward conduction above 6-9 V and current rectifying behavior down to a -20 V reverse bias. The current-voltage characteristics are distinctive of a p-n homojunction formed without deleterious damage or contamination.
UR - http://www.scopus.com/inward/record.url?scp=77950491701&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950491701&partnerID=8YFLogxK
U2 - 10.1063/1.3377005
DO - 10.1063/1.3377005
M3 - Article
AN - SCOPUS:77950491701
VL - 96
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 132105
ER -