Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays

K. C. Kim, Yun Mo Sung, In-Hwan Lee, C. R. Lee, M. D. Kim, Y. Park, Tae Geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.

Original languageEnglish
Pages (from-to)641-644
Number of pages4
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume24
Issue number3
DOIs
Publication statusPublished - 2006 May 22

Fingerprint

Photodiodes
Image sensors
photodiodes
Focal plane arrays
focal plane devices
spectral bands
Quantum efficiency
Gold
integrated circuits
Integrated circuits
readout
quantum efficiency
CMOS
cut-off
Metals
gold
Radiation
Wavelength
aluminum gallium nitride
radiation

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Visible-blind ultraviolet imagers consisting of 8×8 AlGaN p-i-n photodiode arrays. / Kim, K. C.; Sung, Yun Mo; Lee, In-Hwan; Lee, C. R.; Kim, M. D.; Park, Y.; Kim, Tae Geun.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 24, No. 3, 22.05.2006, p. 641-644.

Research output: Contribution to journalArticle

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