We report successful development of both discrete ultraviolet (UV) photodiodes and UV imagers consisting of 8×8 backside-illuminated AlGaN p-i-n photodiode arrays. The discreteAlGaN p-i-n photodiodes showed a responsivity of 0.1 AW, a cutoff wavelength of 350 nm, an external quantum efficiency of 35%, and a response time of 4.1 ns. Then, 8×8 AlGaN p-i-n photodiode arrays were fabricated, followed by hybridizations with readout integrated circuits manufactured using a 0.5 μm 2poly-3metal N-well complementary metal-oxide semiconductor process by gold stud bumping. The 8×8 focal plane array UV imagers operated successfully by sensing radiation in the 300-350 nm spectral bands.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - 2006|
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films