Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device

Ju Yeon Woo, Jongsoo Lee, Hansung Lee, Naesung Lee, Ji Hye Oh, Young Rag Do, Chang-Soo Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The field emission (FE) device based on quantum dot (QD) films as a cathodoluminescent (CL) material has not emerged yet due to the relatively low quantum efficiency and weak photostability of nanocrystals (NCs). Here we improve film stability and luminescence yields by preparing neat films of well-packed core-multishell QDs using spray coating method and then using low-temperature atomic layer deposition (ALD) to infill the pores of these films with metal oxides to produce inorganic nanocomposites. The ALD coatings to protect oxidation and degradation by electrons prevent internal atomic and molecular diffusion and decrease surface trap densities of QD films. Furthermore, the CL of the core-multishell QD films is 2.4 times higher than before ALD infilling. We fabricate the FE device by combining cathode structure with carbon nanotube (CNT) emitters and anode plates with QD thin film and successfully can get brilliant images of the light-emitting FE device. Our research opens a way for developing new quantum optoelectronics with high-performance.

Original languageEnglish
Pages (from-to)12519-12526
Number of pages8
JournalOptics Express
Volume21
Issue number10
DOIs
Publication statusPublished - 2013 May 20

Fingerprint

cathodoluminescence
field emission
quantum dots
electron beams
irradiation
atomic layer epitaxy
molecular diffusion
sprayers
metal oxides
coating
quantum efficiency
nanocomposites
nanocrystals
emitters
anodes
cathodes
carbon nanotubes
traps
luminescence
degradation

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device. / Woo, Ju Yeon; Lee, Jongsoo; Lee, Hansung; Lee, Naesung; Oh, Ji Hye; Do, Young Rag; Han, Chang-Soo.

In: Optics Express, Vol. 21, No. 10, 20.05.2013, p. 12519-12526.

Research output: Contribution to journalArticle

Woo, Ju Yeon ; Lee, Jongsoo ; Lee, Hansung ; Lee, Naesung ; Oh, Ji Hye ; Do, Young Rag ; Han, Chang-Soo. / Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device. In: Optics Express. 2013 ; Vol. 21, No. 10. pp. 12519-12526.
@article{f11d88f78208468aacadcdaddff4f3b3,
title = "Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device",
abstract = "The field emission (FE) device based on quantum dot (QD) films as a cathodoluminescent (CL) material has not emerged yet due to the relatively low quantum efficiency and weak photostability of nanocrystals (NCs). Here we improve film stability and luminescence yields by preparing neat films of well-packed core-multishell QDs using spray coating method and then using low-temperature atomic layer deposition (ALD) to infill the pores of these films with metal oxides to produce inorganic nanocomposites. The ALD coatings to protect oxidation and degradation by electrons prevent internal atomic and molecular diffusion and decrease surface trap densities of QD films. Furthermore, the CL of the core-multishell QD films is 2.4 times higher than before ALD infilling. We fabricate the FE device by combining cathode structure with carbon nanotube (CNT) emitters and anode plates with QD thin film and successfully can get brilliant images of the light-emitting FE device. Our research opens a way for developing new quantum optoelectronics with high-performance.",
author = "Woo, {Ju Yeon} and Jongsoo Lee and Hansung Lee and Naesung Lee and Oh, {Ji Hye} and Do, {Young Rag} and Chang-Soo Han",
year = "2013",
month = "5",
day = "20",
doi = "10.1364/OE.21.012519",
language = "English",
volume = "21",
pages = "12519--12526",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "10",

}

TY - JOUR

T1 - Visible cathodoluminescence of quantum dot films by direct irradiation of electron beam and its materialization as a field emission device

AU - Woo, Ju Yeon

AU - Lee, Jongsoo

AU - Lee, Hansung

AU - Lee, Naesung

AU - Oh, Ji Hye

AU - Do, Young Rag

AU - Han, Chang-Soo

PY - 2013/5/20

Y1 - 2013/5/20

N2 - The field emission (FE) device based on quantum dot (QD) films as a cathodoluminescent (CL) material has not emerged yet due to the relatively low quantum efficiency and weak photostability of nanocrystals (NCs). Here we improve film stability and luminescence yields by preparing neat films of well-packed core-multishell QDs using spray coating method and then using low-temperature atomic layer deposition (ALD) to infill the pores of these films with metal oxides to produce inorganic nanocomposites. The ALD coatings to protect oxidation and degradation by electrons prevent internal atomic and molecular diffusion and decrease surface trap densities of QD films. Furthermore, the CL of the core-multishell QD films is 2.4 times higher than before ALD infilling. We fabricate the FE device by combining cathode structure with carbon nanotube (CNT) emitters and anode plates with QD thin film and successfully can get brilliant images of the light-emitting FE device. Our research opens a way for developing new quantum optoelectronics with high-performance.

AB - The field emission (FE) device based on quantum dot (QD) films as a cathodoluminescent (CL) material has not emerged yet due to the relatively low quantum efficiency and weak photostability of nanocrystals (NCs). Here we improve film stability and luminescence yields by preparing neat films of well-packed core-multishell QDs using spray coating method and then using low-temperature atomic layer deposition (ALD) to infill the pores of these films with metal oxides to produce inorganic nanocomposites. The ALD coatings to protect oxidation and degradation by electrons prevent internal atomic and molecular diffusion and decrease surface trap densities of QD films. Furthermore, the CL of the core-multishell QD films is 2.4 times higher than before ALD infilling. We fabricate the FE device by combining cathode structure with carbon nanotube (CNT) emitters and anode plates with QD thin film and successfully can get brilliant images of the light-emitting FE device. Our research opens a way for developing new quantum optoelectronics with high-performance.

UR - http://www.scopus.com/inward/record.url?scp=84878536723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878536723&partnerID=8YFLogxK

U2 - 10.1364/OE.21.012519

DO - 10.1364/OE.21.012519

M3 - Article

C2 - 23736470

AN - SCOPUS:84878536723

VL - 21

SP - 12519

EP - 12526

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 10

ER -