We report pseudodielectric function data 〈∈〉=〈∈1〉+i〈∈ 2〉 of Zn1-xMgxSe and Zn1-xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈∈〉, from which the bowing parameters and spin-orbit-splitting Δ1 of the E1 and E1+Δ1 gaps were obtained. A transfer of oscillator strength from E1+Δ1 to E1 with increasing Mg and Be composition and a positive bowing of these threshold energies are attributed to the k-linear interaction, which is large in small-band gap semiconductors.
|Number of pages||5|
|Journal||Journal of Applied Physics|
|Publication status||Published - 2000 Jul 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)