Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys

Hosun Lee, In Young Kim, J. Powell, D. E. Aspnes, S. Lee, F. Peiris, J. K. Furdyna

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20 Citations (Scopus)

Abstract

We report pseudodielectric function data 〈∈〉=〈∈1〉+i〈∈ 2〉 of Zn1-xMgxSe and Zn1-xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈∈〉, from which the bowing parameters and spin-orbit-splitting Δ1 of the E1 and E11 gaps were obtained. A transfer of oscillator strength from E11 to E1 with increasing Mg and Be composition and a positive bowing of these threshold energies are attributed to the k-linear interaction, which is large in small-band gap semiconductors.

Original languageEnglish
Pages (from-to)878-882
Number of pages5
JournalJournal of Applied Physics
Volume88
Issue number2
DOIs
Publication statusPublished - 2000 Jul 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Lee, H., Kim, I. Y., Powell, J., Aspnes, D. E., Lee, S., Peiris, F., & Furdyna, J. K. (2000). Visible-near ultraviolet ellipsometric study of Zn1-xMgxSe and Zn1-xBexSe alloys. Journal of Applied Physics, 88(2), 878-882. https://doi.org/10.1063/1.373750