Visualizing Grain Statistics in MOCVD WSe2through Four-Dimensional Scanning Transmission Electron Microscopy

Alejandra Londoño-Calderon, Rohan Dhall, Colin Ophus, Matthew Schneider, Yongqiang Wang, Enkeleda Dervishi, Hee Seong Kang, Chul Ho Lee, Jinkyoung Yoo, Michael T. Pettes

Research output: Contribution to journalArticlepeer-review

Abstract

Using four-dimensional scanning transmission electron microscopy, we demonstrate a method to visualize grains and grain boundaries in WSe2grown by metal organic chemical vapor deposition (MOCVD) directly onto silicon dioxide. Despite the chemical purity and uniform thickness and texture of the MOCVD-grown WSe2, we observe a high density of small grains that corresponds with the overall selenium deficiency we measure through ion beam analysis. Moreover, reconstruction of grain information permits the creation of orientation maps that demonstrate the nucleation mechanism for new layers-Triangular domains with the same orientation as the layer underneath induces a tensile strain increasing the lattice parameter at these sites.

Original languageEnglish
Pages (from-to)2578-2585
Number of pages8
JournalNano Letters
Volume22
Issue number6
DOIs
Publication statusPublished - 2022 Mar 23

Keywords

  • 2D materials
  • 4D-STEM
  • MOCVD
  • grain boundaries
  • orientation
  • strain

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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