Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films

Young Pyo Hong, Seok Ha, Ha Yong Lee, Young Cheol Lee, Kyung Hyun Ko, Dong Wan Kim, Hee Bum Hong, Kug Sun Hong

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68 Citations (Scopus)

Abstract

The Bi2O3-ZnO-Nb2O5 (BZN) pyrochlore thin films were prepared on platinized Si substrates using a reactive rf magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable dielectric properties of films with deposition parameters were investigated. The sputter deposited BZN pyrochlore thin films have a cubic pyrochlore phase and secondary phases of zinc niobate and bismuth niobate when crystallized at 600-800 °C. The dielectric constant and tunability of thin films changed with an O2/Ar ratio and post-annealing temperature. The BZN pyrochlore thin films sputtered in 15% O2 and annealed at 700 °C had a dielectric constant of 153, tan δ of 0.003 and maximum tunability of 14% at 1000 kV/cm of dc bias field under 1 MHz.

Original languageEnglish
Pages (from-to)183-188
Number of pages6
JournalThin Solid Films
Volume419
Issue number1-2
DOIs
Publication statusPublished - 2002 Nov 1

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Keywords

  • Dielectric properties
  • Pyrochlore
  • Sputtering
  • Tunability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Pyo Hong, Y., Ha, S., Yong Lee, H., Cheol Lee, Y., Hyun Ko, K., Kim, D. W., Bum Hong, H., & Sun Hong, K. (2002). Voltage tunable dielectric properties of rf sputtered Bi2O3-ZnO-Nb2O5 pyrochlore thin films. Thin Solid Films, 419(1-2), 183-188. https://doi.org/10.1016/S0040-6090(02)00744-7