(Bi2-xZnx)(NbxTi2-x)O7 (BZNT, 0.1 × 1.0) pyrochlore thin films were prepared on platinized Si substrates using metalorganic deposition process. Broad ranges of solid solutions based on cubic (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 were observed by chemical substitutions, e.g., Bi3+ + Ti4+ = Zn2+ + Nb5+. Crystallization of BZNT thin films started below 600 °C and completed at about 750 °C. The crystal structure, and dielectric characteristics of thin films were investigated using X-ray diffraction, FE-SEM, and LCR-meter. The dielectric constants of BZNT decreased with decreasing Ti content. The resultant solid solutions have dielectric constant in the range of 142-242. Room temperature capacitance-voltage measurements at I MHz demonstrated a tunability of nearly 30 %, with a zero bias tan δ of 0.005. The effect of structural stability on the dielectric properties was also investigated.
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2003 Apr 1|
- Dielectric voltage tunable
- Metalorganic deposition peocess
- Tin films
ASJC Scopus subject areas
- Physics and Astronomy(all)