Voltage tunable dielectric properties of titanium substituted Bi-pyrochlore thin films

Jin Young Kim, Dong-Wan Kim, Hyun Seok Jung, Kug Sun Hong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

(Bi2-xZnx)(NbxTi2-x)O7 (BZNT, 0.1 × 1.0) pyrochlore thin films were prepared on platinized Si substrates using metalorganic deposition process. Broad ranges of solid solutions based on cubic (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 were observed by chemical substitutions, e.g., Bi3+ + Ti4+ = Zn2+ + Nb5+. Crystallization of BZNT thin films started below 600 °C and completed at about 750 °C. The crystal structure, and dielectric characteristics of thin films were investigated using X-ray diffraction, FE-SEM, and LCR-meter. The dielectric constants of BZNT decreased with decreasing Ti content. The resultant solid solutions have dielectric constant in the range of 142-242. Room temperature capacitance-voltage measurements at I MHz demonstrated a tunability of nearly 30 %, with a zero bias tan δ of 0.005. The effect of structural stability on the dielectric properties was also investigated.

Original languageEnglish
JournalJournal of the Korean Physical Society
Volume42
Issue numberSUPPL.
Publication statusPublished - 2003 Apr 1
Externally publishedYes

Fingerprint

dielectric properties
titanium
electric potential
solid solutions
thin films
permittivity
structural stability
electrical measurement
capacitance
substitutes
crystallization
scanning electron microscopy
crystal structure
room temperature
diffraction
x rays

Keywords

  • (BiZ)(NbTi)O
  • (BZNT)
  • Dielectric voltage tunable
  • Metalorganic deposition peocess
  • Tin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Voltage tunable dielectric properties of titanium substituted Bi-pyrochlore thin films. / Kim, Jin Young; Kim, Dong-Wan; Jung, Hyun Seok; Hong, Kug Sun.

In: Journal of the Korean Physical Society, Vol. 42, No. SUPPL., 01.04.2003.

Research output: Contribution to journalArticle

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N2 - (Bi2-xZnx)(NbxTi2-x)O7 (BZNT, 0.1 × 1.0) pyrochlore thin films were prepared on platinized Si substrates using metalorganic deposition process. Broad ranges of solid solutions based on cubic (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 were observed by chemical substitutions, e.g., Bi3+ + Ti4+ = Zn2+ + Nb5+. Crystallization of BZNT thin films started below 600 °C and completed at about 750 °C. The crystal structure, and dielectric characteristics of thin films were investigated using X-ray diffraction, FE-SEM, and LCR-meter. The dielectric constants of BZNT decreased with decreasing Ti content. The resultant solid solutions have dielectric constant in the range of 142-242. Room temperature capacitance-voltage measurements at I MHz demonstrated a tunability of nearly 30 %, with a zero bias tan δ of 0.005. The effect of structural stability on the dielectric properties was also investigated.

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