W-band injection-locked frequency octupler using a push-push output structure

Kwangwon Park, Dongkyo Kim, Iljin Lee, Sanggeun Jeon

Research output: Contribution to journalArticle

Abstract

This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.

Original languageEnglish
Article number2946112
Pages (from-to)822-825
Number of pages4
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number12
DOIs
Publication statusPublished - 2019 Dec

Keywords

  • Injection-locked frequency octupler (ILFO)
  • Multiplication factor
  • Push-push oscillator
  • W-band frequency

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

W-band injection-locked frequency octupler using a push-push output structure. / Park, Kwangwon; Kim, Dongkyo; Lee, Iljin; Jeon, Sanggeun.

In: IEEE Microwave and Wireless Components Letters, Vol. 29, No. 12, 2946112, 12.2019, p. 822-825.

Research output: Contribution to journalArticle

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