Abstract
This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.
| Original language | English |
|---|---|
| Article number | 2946112 |
| Pages (from-to) | 822-825 |
| Number of pages | 4 |
| Journal | IEEE Microwave and Wireless Components Letters |
| Volume | 29 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2019 Dec |
Keywords
- Injection-locked frequency octupler (ILFO)
- Multiplication factor
- Push-push oscillator
- W-band frequency
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
W-band injection-locked frequency octupler using a push-push output structure. / Park, Kwangwon; Kim, Dongkyo; Lee, Iljin; Jeon, Sanggeun.
In: IEEE Microwave and Wireless Components Letters, Vol. 29, No. 12, 2946112, 12.2019, p. 822-825.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - W-band injection-locked frequency octupler using a push-push output structure
AU - Park, Kwangwon
AU - Kim, Dongkyo
AU - Lee, Iljin
AU - Jeon, Sanggeun
PY - 2019/12
Y1 - 2019/12
N2 - This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.
AB - This letter presents an injection-locked frequency octupler (ILFO) fabricated using a 100-nm GaAs pHEMT. A frequency quadrupler, followed by an injection-locked push-push oscillator, is employed to achieve a high multiplication factor of eight with a simple structure. Compared to conventional amplifier-multiplier chains, the proposed structure is advantageous for dc power and chip area consumption, phase noise, and circuit stability. The high multiplication factor allows the use of a low-frequency, high-performance, phase-locked-loop (PLL) as input. The ILFO achieves a locking range from 90.5 to 95.2 with 1-dBm input power. The output power is measured to be −0.4 dBm at 91.2 GHz. The phase-noise degradation from the input source to the output is 19.7 dB at 100-kHz offset.
KW - Injection-locked frequency octupler (ILFO)
KW - Multiplication factor
KW - Push-push oscillator
KW - W-band frequency
UR - http://www.scopus.com/inward/record.url?scp=85077513908&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85077513908&partnerID=8YFLogxK
U2 - 10.1109/LMWC.2019.2946112
DO - 10.1109/LMWC.2019.2946112
M3 - Article
AN - SCOPUS:85077513908
VL - 29
SP - 822
EP - 825
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
SN - 1531-1309
IS - 12
M1 - 2946112
ER -