Wafer level forward current reliability analysis of 120 GHz production SiGe HBTs under accelerated current stress

J. S. Rieh, K. Watson, F. Guarin, Z. Yang, P. C. Wang, A. Joseph, G. Freeman, S. Subbanna

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

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Engineering & Materials Science