Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress

J. S. Rieh, K. Watson, F. Guarin, Z. Yang, P. C. Wang, A. Joseph, G. Freeman, S. Subbanna

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

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Engineering & Materials Science